Summary of Features:
- Highly linear low noise RF transistor
- Provides outstanding performance for a wide range of wireless applications
- Based on Infineon's reliable high volume SiGe:C technology
- Ideal for CDMA and WLAN applications
- Collector design provides high linearity of 14.5 dBm OP1dB for low voltage application
- Maximum stable gain :Gms = 21.5 dB at 1.8 GHz ,Gma = 11 dB at 6 GHz
- Outstanding noise figure NFmin = 0.7 dB at 1.8 GHz
- Outstanding noise figure NFmin = 1.3 dB at 6 GHz
- Accurate SPICE GP model enables effective design in process
- Pb-free (RoHS compliant) package
- Qualified according AEC Q101
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