600 V CoolMOS™ G7

600 V CoolMOS™ C7 Gold (G7)

anchor

Overview

Infineon Technologies introduces the 600 V CoolMOS™ C7 Gold (G7) technology in surface mount device (SMD) with bottom-side cooling TO-Leadless (TOLL). The 600 V CoolMOS™ G7 family is now available also in Infineon’s latest top-side cooling package innovation, the Double DPAK (D-DPAK) package.The CoolMOS™ G7, for the first time, brings together the benefits of the improved 600 V CoolMOS™ C7 technology, 4-pin Kelvin source capability, and the improved thermal properties of the TO-Leadless and D-DPAK packages to enable an SMD solution for high-current hard-switching topologies such as power factor correction (PFC) up to 3 kW and for 600 V CoolMOS™ G7 also for resonant circuits such as high end LLC.

Key Features

  • Best RDS(on) x Eoss and RDS(on) x Qg
  • Smallest footprint RDS(on)
  • Kelvin source / low source (~1 nH)
  • Easy visual-inspection leads

Products

About

600 V CoolMOS™ G7 technology in TO-Leadless and D-DPAK packages

600 V G7: Power density through best-in-class 28 mΩ in 115 mm² TOLL footprint. TOLL package is easy to use and has the highest quality standards. Featuring a robust die-attach process resulting in not only higher reliability package, but also improved thermals that enable SMD TOLL package to be used in higher current designs than has been previously possible. 

Improved efficiency and density with 600 V CoolMOS™ G7 (SJ) MOSFETs

Improved power density due to low RDS(on) in small footprint by either replacing TO packages (height restrictions) or paralleling SMD packages due to thermal or RDS(on) requirements. Production cost reduction by moving to SMD through quicker assembly times. Kelvin source configuration and low parasitic source inductance (~1 nH). Visual inspection is made easy by providing grooved pins.

Innovative technology for faster switching and improved designs

The  CoolMOS™ G7 houses our most advanced CoolMOS™ family (C7) in some of the lowest parasitic packages. With output capacitance of few tens of picofarads (approximately 80 percent reduction to previous generations) and similar reduction of gate capacitance, this is one of the fastest devices in both hard- and soft-switching topologies using elevated switching frequencies. An improvement of more than 0.5 percent efficiency has been demonstrated for PFC designs above 1 kW.

600 V CoolMOS™ G7 technology in TO-Leadless and D-DPAK packages

600 V G7: Power density through best-in-class 28 mΩ in 115 mm² TOLL footprint. TOLL package is easy to use and has the highest quality standards. Featuring a robust die-attach process resulting in not only higher reliability package, but also improved thermals that enable SMD TOLL package to be used in higher current designs than has been previously possible. 

Improved efficiency and density with 600 V CoolMOS™ G7 (SJ) MOSFETs

Improved power density due to low RDS(on) in small footprint by either replacing TO packages (height restrictions) or paralleling SMD packages due to thermal or RDS(on) requirements. Production cost reduction by moving to SMD through quicker assembly times. Kelvin source configuration and low parasitic source inductance (~1 nH). Visual inspection is made easy by providing grooved pins.

Innovative technology for faster switching and improved designs

The  CoolMOS™ G7 houses our most advanced CoolMOS™ family (C7) in some of the lowest parasitic packages. With output capacitance of few tens of picofarads (approximately 80 percent reduction to previous generations) and similar reduction of gate capacitance, this is one of the fastest devices in both hard- and soft-switching topologies using elevated switching frequencies. An improvement of more than 0.5 percent efficiency has been demonstrated for PFC designs above 1 kW.

Documents

Documents

Design resources

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community ", "labelEn" : "Ask the community " }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions ", "labelEn" : "View all discussions " } ] }