Power conversion

Infineon provides a full spectrum of power controllers and switches, including AC-DC controllers, DC-DC converters, silicon, and SiC MOSFETs in a variety of packages, GaN HEMTs, intelligent power modules, lighting ICs, transistors (IGBTs), diodes and rectifiers, regulators, isolation interfaces, and voltage and current management for internal and external power supply applications.

Our design solutions increase active-mode efficiency, decrease standby-mode power consumption, and provide power factor correction at every stage of your layout from line to load. Depending on your design requirements, Infineon delivers solutions from microamps to megawatts as either discrete or integrated devices.

Choose your preferred application to browse our individual SMPS solutions.

SMPS designs are used in numerous applications, including desktop PCs, adapters and chargers for portable electronic devices, servers and data centers, telecommunication infrastructure, EV charging, situations that require uninterrupted power supply (UPS) such as air traffic control systems, medical applications, and industrial applications such as process controls, factory automation, and machinery control.

Regardless of the application, efficiency, reliability, and ever-higher power delivery are the most important requirements that must be met. Infineon's semiconductor solutions deliver all of this and more. Our broad product portfolio of silicon or silicon carbide power MOSFETs and gallium nitride HEMTs allow you to choose the right technology based on your needs.

Explore our tailored system offering for your application in our block diagrams on each SMPS page.

The technological advancement in wide bandgap technology like silicon carbide and gallium nitride is enabling new designs in SMPS. Infineon has made significant investments into these technologies, and resultingly, offers a market-leading portfolio of SiC and GaN discretes and ICs for your SMPS design. 

Specifically, SiC sees use in 650 V - 3.3 kV applications such as off-board EV charging. In this application, for example, our CoolSiC™ 1200 V SiC Trench MOSFET brings the possibility of bidirectionality, the lowest gate charge and device capacitance levels seen in 1200 V switches, and no reverse recovery losses of the internal commutation proof body diode.

Meanwhile, GaN is more present in 40 V - 650 V applications such as server and telecom. In these applications, our CoolGaN™ GaN HEMTs lead to cost savings and more power per rack and easier control schemes due to its hard-switching capabilities while at the same time offering efficiency benefits compared to the next best silicon alternative.