PQFN 2x2

Überblick

OptiMOS™ and IR MOSFET™ low-voltage power MOSFET in PQFN 2x2 package

Included in Infineon’s vast offering of MOSFETs with low RDS(on) and high switching performance is the PQFN 2x2 portfolio. This family is optimized for efficiency in a small form factor, making it the perfect solution for applications such as wireless charging, load switches and low power DCDC including LED lighting.

The small 4 mm2 footprint, combined with outstanding electrical performance contributes towards form factor improvement in end applications.

The portfolio is available in both IR MOSFET™ and OptiMOS™ MOSFET technologies, offering customers optimized solutions for both general purpose and high performance applications. The family offers flexibility in gate drive, with 4.5 V and 2.5 V gate drive capability.

PQFN 2x2
Key features Key benefits
  • Low RDS(on)  in a small package
  • Low gate charge
  • Super Logic Level (2.5 V) and Logic Level (4.5 V) availability
  • Board space reduction
  • Reduction in switching and driver losses
  • Gate drive flexibility
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