As the leading power supplier with >20 years of heritage in silicon carbide (SiC) technology development we are prepared to cater to the need for smarter, more efficient energy generation, transmission, and consumption. Our experts understand what is needed to reduce system complexity, leading to decreased system cost and size in mid- to high-power systems.

With our extensive product portfolio, meeting the highest quality standards, long system lifetime and reliability are guaranteed. Infineon owns the complete supply chain and offers unbiased design-in support for Si, GaN and SiC.

Turn to Infineon, the trusted SiC-supplier, and become part of a revolution to rely on - independent of your individual design, as well as system requirements.

By choosing Infineon´s CoolSiC™ JFET Technology, customers become part of a revolution that is shaping the future of power electronics.

We continuously add SiC-based products - including the revolutionary CoolSiC™ MOSFETs in trench technology - to the already existing Si-assortment. Today the company offers one of the most comprehensive power portfolios in the industry – ranging from ultra-low to high-voltage power devices.

Going even beyond only ensuring the availability of best-fit solutions, we walked the extra mile to optimize the SiC-based product offering to meet specific application requirements. In response to the fact that ultra-fast switching power transistors such as CoolSiC™ MOSFETs can be easier handled utilizing isolated gate output sections, our customers are supplied with the perfectly matching galvanically isolated EiceDRIVER™ gate-driver ICs based on our coreless transformer technology.

Producing several millions of hybrid modules (a combination of a fast silicon-based switch with a CoolSiC™ Shottky diode) in recent years resulted in a tremendous know-how and capacity build-up and further contributed to our technology leadership.

Explore how the new CoolSiC™ MOSFET G2 trench MOSFET enables a new level of SiC performance, while meeting the highest quality standards in all common combinations of power schemes: AC-DC, DC-DC and DC-AC. Photovoltaic inverters, energy storage systems, EV charging, power supplies, motor drives and more belong to the many cases where SiC MOSFETs provide additional performance, compared to Si alternatives.

Can silicon carbide help drive innovation in rail transportation? 

In this episode of “Ask the Expert”, our expert Sebastian explains how silicon carbide enables more efficient and compact traction converters, supporting rail transportation's electrification and decarbonization.

For more than twenty years, Infineon has been at the forefront of developing solutions addressing demands for energy savings, size reduction, system integration and improved reliability in its products. One of the most revolutionary developments was the use of SiC as a main compound in some of its devices. Infineon is the world’s first SiC discrete power supplier. It was the global pioneer in SiC technology and commercialization. In this training we will present one of the most successful solutions that Infineon’s developed in this field.​

For more than twenty years, Infineon has been at the forefront of developing solutions addressing demands for energy savings, size reduction, system integration and improved reliability in its products. One of the most revolutionary developments was the use of SiC as a main compound in some of its devices. Infineon is the world’s first SiC discrete power supplier. It was the global pioneer in SiC technology and commercialization. In this training we will present one of the most successful solutions that Infineon’s developed in this field.​

​To lead the transformation towards sustainable energy generation and consumption, you know that silicon carbide technology is at the strategic core to address key market trends in this direction. To do so, here are five reasons why you should choose Infineon’s SiC devices.

This video highlights the benefits of CoolSiC™, as seen through the eyes of our customers. Featuring testimonials from alpitronic, Tritium, Lite-On, Siemens Mobility, and Fronius, we see how SiC is driving innovation in energy generation, storage, and consumption.

​In this training we focus on the importance of optimizing the DC link for SiC Easy modules, explore the significant effects of parasitic elements in the DC link, and dive into the key considerations for connecting the DC link to an Easy module.​

When aiming to achieve maximum system benefits by using SiC MOSFETs it is advisable to complement Infineon’s CoolSiC™ MOSFETs with Infineon’s EiceDRIVER™ gate-driver ICs to fully leverage the advantage of the SiC-technology. Improved efficiency, space and weight savings, part count reduction, and enhanced system reliability will be the encountered positive effects.

Customers may choose between different EiceDRIVER™ gate-driver types including:

  • Single-channel high-side compact gate driver
  • Single- and dual output enhanced driver with short-circuit protection
  • Slew-rate control high-side driver for toughest requirements
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