800 V and 900 V CoolMOS™ C3

800 V and 900 V CoolMOS™ C3 superjunction MOSFETs

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Overview

The CoolMOS™ C3 devices were among the first to bring the MOSFETs into super junction territory. This enabled a drastic reduction of the on-resistance by a factor of four compared to other high-voltage conventional MOSFETs. CoolMOS™ C3 offers low-conduction and switching losses. CoolMOS™ C3 is well-suited for legacy high-efficiency switch mode power supplies, industry, and renewables applications.

Key Features

  • Low gate charge for fast switching
  • Low conduction losses (RDS(on)*A)
  • 800 V and 900 V optimized range
  • Low Eoss @400V for fast switching

Products

About

Power-up your systems with 800 V & 900 V CoolMOS™ C3 SJ MOSFETs

One of the first MOSFETs based on the super junction principle, the C3 series brought about a large and sudden improvement in conduction losses. This was also coupled to improvement in switching speed and unparalleled at the time cost/performance ratio.

Read more about 900V CoolMOS™ C3
Low switching and conduction losses for reduced power dissipation

The on-resistance (RDS(on)) can be drastically reduced by a factor of four or more per package type, compared to other 900 V conventional MOSFETs. 900 V CoolMOS™ C3 also offers a very low figure-of-merit on-resistance times gate charge (RDS(on)*QG) of 34 W*nC, translating into low conduction, driving, and switching losses.

The energy stored in the output capacitance is reduced by a factor of two compared to conventional 900 V MOSFETs, which reduces power losses during hard-switched turn-on.

Excellent thermal characteristics even under heavy load conditions

The 900 V CoolMOS™ C3 is well suited for high efficiency switch mode power supplies, industry and renewable energies applications. Change of design criteria is possible as designers can allow a higher DC-link or input voltage. High-power applications which use 3-phase PFC and PWM stages with DC-link voltages up to 750 V will benefit from 900 V CoolMOS™ C3 offering lowest on-resistance in TO-247 package.

The high blocking voltage in combination with low conduction losses and switching losses also open up for new design criteria in quasi-resonant flyback and single transistor forward topologies, used in LCD-TV and PC silverboxes for example. Higher efficiency, reduced system costs, and high power density are pointing the way towards future system development.

Power-up your systems with 800 V & 900 V CoolMOS™ C3 SJ MOSFETs

One of the first MOSFETs based on the super junction principle, the C3 series brought about a large and sudden improvement in conduction losses. This was also coupled to improvement in switching speed and unparalleled at the time cost/performance ratio.

Read more about 900V CoolMOS™ C3

Low switching and conduction losses for reduced power dissipation

The on-resistance (RDS(on)) can be drastically reduced by a factor of four or more per package type, compared to other 900 V conventional MOSFETs. 900 V CoolMOS™ C3 also offers a very low figure-of-merit on-resistance times gate charge (RDS(on)*QG) of 34 W*nC, translating into low conduction, driving, and switching losses.

The energy stored in the output capacitance is reduced by a factor of two compared to conventional 900 V MOSFETs, which reduces power losses during hard-switched turn-on.

Excellent thermal characteristics even under heavy load conditions

The 900 V CoolMOS™ C3 is well suited for high efficiency switch mode power supplies, industry and renewable energies applications. Change of design criteria is possible as designers can allow a higher DC-link or input voltage. High-power applications which use 3-phase PFC and PWM stages with DC-link voltages up to 750 V will benefit from 900 V CoolMOS™ C3 offering lowest on-resistance in TO-247 package.

The high blocking voltage in combination with low conduction losses and switching losses also open up for new design criteria in quasi-resonant flyback and single transistor forward topologies, used in LCD-TV and PC silverboxes for example. Higher efficiency, reduced system costs, and high power density are pointing the way towards future system development.

Documents

Documents

Design resources

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