1EDI10I12MH

1200 V single high-side gate driver IC with galvanic isolation, active Miller clamp and short circuit clamping
Data Sheet

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1EDI10I12MH
1EDI10I12MH
Data Sheet

Product details

  • Channels
    1
  • Configuration
    High-side
  • Input Vcc
    3.1 V to 17 V
  • Isolation Type
    Galvanic isolation - Functional
  • Output Current (Source)
    2.2 A
  • Output Current (Sink)
    2.3 A
  • Qualification
    Industrial
  • Turn Off Propagation Delay
    300 ns
  • Turn On Propagation Delay
    300 ns
  • VBS UVLO (On)
    12 V
  • VBS UVLO (Off)
    11.1 V
  • VCC UVLO (On)
    2.85 V
  • VCC UVLO (Off)
    2.75 V
  • Voltage Class
    1200 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
EiceDRIVER™ 1200 V high-side gate driver IC with typical 2.2 A source and 2.3 A sink currents in a wide body DSO-8 package with UL certified galvanic isolation, active Miller clamp and short circuit clamping for IGBT Modules .For higher isolation rating, higher current, shorter propagation delay, check out our X3 Compact family , 1ED3122MU12H . The DSO-8 150mil narrow body version with great price performance ratio is also available: 1EDI10I12MF

Features

  • Coreless transformer isolated
  • 1 A rail-to-rail outputs
  • 300 mil wide-body package
  • Package with 8 mm creepage distance
  • Active Miller clamp

Documents

Documents

Design resources

Partner solutions

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{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }