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RoHS Compliant

KIT_1EDB_AUX_GAN

Isolated Gate Driver IC with a configurable floating unipolar or bipolar auxiliary supply for GaN HEMTs
Application Notes
ea.
in stock

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KIT_1EDB_AUX_GAN
KIT_1EDB_AUX_GAN
ea.
Application Notes

Product details

  • Dimensions
    8,47mm x 17,55mm x 2,8mm
  • Family
    Gate Driver
  • Frequency
    700 kHz to 1400 kHz
  • Input Type
    DC
  • Interfaces
    Pads with 1.27mm pitch
  • Mounting
    Direct soldering into an 8-pin footprint or plug-in via 1.27mm pitch connector
  • Output Current
    6 mA to 110 mA
  • Output Voltage
    9 V to 11.5 V
  • Pout
    0.07 W to 1 W
  • Qualification
    Industrial
  • Sub Application
    Industrial
  • Supply Voltage
    11.4 V to 12 V
  • Target Application
    Industrial power supplies (SMPS, Residential UPS), Solar micro inverter, EV Off-board chargers, Server and Telecom switch-mode power supplies (SMPS)
  • Topology
    Use-case is to drive GaN with isolated unipolar or bipolar driving
Recommended
OPN
KIT1EDBAUXGANTOBO1
Product Status active
Infineon Package --
Package Name N/A
Packing Size 1
Packing Type CONTAINER
Moisture Level N/A
Moisture Packing NON DRY
Lead-free No
Halogen Free No
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package --
Package Name -
Packing Size 1
Packing Type CONTAINER
Moisture Level -
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
KIT_1EDB_AUX_GaN is a complete driving solution for GaN HEMTs , including an isolated Gate Driver IC and its floating auxiliary supply. The isolated auxiliary supply can support unipolar or bipolar driving with typical levels easily configurable by means of one resistor. The KIT_1EDB_AUX_GaN is available on request. Please contact our support.

Features

  • Up to 1.5 W output power to cover use-case scenarios with different GaN and switching frequencies
  • Optimized for bipolar driving levels typical of GaN HEMTs
  • Isolated driving solution with high CMTI for GaN HEMTs

Benefits

  • A compatible footprint allows easy plug-in in existing boards including single channel isolated gate drivers
  • Complete compact and cost optimized driving solution
  • Driving levels easily configurable by means of one resistors

Applications

Bill of Material

Documents

Documents

Design resources

Partner solutions

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{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }