High performance duals

Overview

Optimized for high efficiency and high current capability

Infineon's family of high performance duals includes the OptiMOS™ Power Block MOSFETs as well as the OptiMOS™ half bridge MOSFETs. The OptiMOS™ Power Block devices, integrate a low-side and a high-side MOSFET in a synchronous buck converter configuration with a source-down connection of the low side MOSFET for improved thermals, simplified layout and reduced EMI.

Key features

Asymmetric half-bridge with very low R_DS(on)in a small 5.0 x 6.0 mm package outline
Source-down low side MOSFET for better PCB cooling
Internally connected low-side and high-side (lowest loop inductance)
High-side Kelvin connection for more efficient driving

Key benefits

Compact and simplified layout for DC-DC converter
Optimized layout with lowest loop inductivity and best thermal performance
High efficiency performance

Key applications

Desktop and server
Single-phase and multiphase POL
High power density voltage regulator

Products

Highlights

Power Block

Layout

Easy and compact layout: Improved power loop (connection to input capacitors) direct PGND connection for better cooling.

Power Stage 3x3

BSZ0910ND - key features, benefits and applications

Key features

Symmetric half-bridge with very low R_DS(on) in a small 3.0 x 3.0mm² package outline
Exposed pads
Logic level (4.5V rated)
RoHS compliant 6/6 (full lead free)

Key benefits

Low switching losses
High switching frequency operation
Lowest parasitics
Low operating temperature
Low gate drive losses
RoHS 6/6 lead free product

Key applications

BSZ0909ND - key features, benefits and applications

Infineon image OptiMOS™ Power Stage application

Key features

Ultra-low Q_g
Symmetric half bridge in a small 3.0x3.0 mm² package outline
Exposed pads
Logic level (4.5 V rated)
RoHS compliant 6/6 (full lead free)

Key benefits

Low switching losses
High switching frequency operation
Lowest parasitics
Low operating temperature
Low gate drive losses
RoHS 6/6 lead free product

Key applications

System diagram: inductive wireless charging

Qi (WPC) which supports single-coil and multi-coil inductive topologies and uses frequencies of 100-300kHz, dominates the market today in the smartphone segment as measured by volume. Their widespread use can be attributed to their cost-efficiency. Inductive topologies always rely on in-band communication.

The BSZ0910ND is a leading product in the industry when it comes to fast switching because it has an optimized figure-of-merit for gate-source on-state resistance R_DS(on).

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Selection Tool Wireless Charging

With our selection tool you will find the right parts for your design requirements: Select your application, the power range, the standard you want to apply, the topology and receive an overview of Infineon's recommended product offerings for your design.