Solutions for gate driver and power switches
Select your Gate Driver perfectly matching your Switches, Systems and Applications
Every switch needs a driver - Every driver needs a switch. We as the market leaders in power semiconductors know how important a perfectly harmonized system is for our customers application. Decades of application expertise and technology development at both Infineon and International Rectifier have produced a portfolio of gate driver ICs for use with silicon and wide-bandgap power devices, such as MOSFETs, discrete IGBTs, IGBT modules, SiC MOSFETs and GaN HEMTs.
We offer excellent product families of galvanic isolated gate drivers, automotive qualifies gate drivers, 200 V, 500-700 V, 1200 V level shift gate drivers, and non-isolated low-side drivers. The following describes typical applications using Infineon gate drivers together with power switches and modules.
Application | Driver Voltage class [V] | Configuration | Driver | Description | Suitable switches |
Inverter (<3.5 kW) |
200 | Half-bridge | IRS2007S/M | with VCC & VBS UVLO | |
600 | Single high-side | IRS2127S | with FAULT-RPT, OCP | TRENCHSTOP™ IGBT+Diode EasyPIM™ 1B/2B module |
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Half-bridge | 2EDL23I06PJ | Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT |
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High and low-side | IRS2186(4)S | with high current | |||
Three-phase | 6EDL04I06PT | Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT | |||
IR2136S/J | OCP, EN, FAULT-RPT | ||||
1200 | Half-bridge | IR2214SS | with DESAT, Synchronization, soft shutdown, FAULT-RPT |
TRENCHSTOP™ IGBT+Diode EasyPIM™ 1B/2B module EasyPACK™ 1B/2B module |
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Three-phase | 6ED2230S12T* | Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT | TRENCHSTOP™ IGBT+Diode EasyPIM™ 1B/2B module |
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Inverter (<7.5 kW) |
1200 | Single high-side | 1EDC20I12AH | Functional isolation, ≥ 100 kV/μs CMTI, short circuit clamping, VISO = 2500 V(rms) for 1 min (1EDC only), active Miller clamp (MH/MF only), separate sink/source output (AH only) | CoolSiC™ SiC MOSFET TRENCHSTOP™ IGBT+Diode EasyPIM™ 1B/2B module EasyPACK™ 1B module Easy 1B/2B 3-level |
1EDC30I12MH | |||||
1EDI30I12MF | |||||
Three-phase | 6ED2230S12T* | Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT | TRENCHSTOP™ IGBT+Diode EasyPIM™ 1B/2B module |
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Half-bridge | 2ED020I12-FI | Functional isolation on high-side, comparator, OPAMP, SD | TRENCHSTOP™ IGBT+Diode EasyPIM™ 1B/2B module |
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Inverter (<30 kW) |
1200 | Single high-side | 1ED020I12-F2 | Functional isolation, ≥ 100 kV/μs CMTI, active Miller clamp, DESAT, short circuit clamping, FAULT-RST | CoolSiC™ SiC MOSFET EasyPIM™ 1B/2B module EasyPACK™ 1B module |
Dual high-side | 2ED020I12-F2 | ||||
Single high-side | 1ED020I12-BT | Basic isolation, VDE 0884-10 certified, VIORM = 1420 V, VIOTM = 6000 V; UL 1577 certified, VISO = 3750 V(rms) for 1 min, ≥ 100 kV/ μs CMTI, active Miller clamp, DESAT, short circuit clamping, two level turn off, FAULT-RST | |||
Inverter (<200 kW) | 1200 | Single high-side | 1EDI60H12AH | Functional isolation, ≥ 100 kV/μs CMTI, Separate sink/source output, short circuit clamping, 125-ns propagation delay |
CoolSiC™ SiC MOSFET module EconoPACK™ 3 module EconoDUAL™ 3 module |
1EDS20I12SV | Reinforced isolation, VDE 0884-10, VIORM = 1420 V, VIOTM = 8000 V; UL 1577; VISO = 5000 V(rms); soft shutdown, DESAT, FAULT-RPT, OCP, slew rate control, TLTO | CoolSiC™ SiC MOSFET module EasyPACK™ 1B module Easy 1B/2B 3-level EconoPIM™ 2/3 module |
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1ED020I12-B2 | Basic isolation, VDE 0884-10 certified, VIORM = 1420 V, VIOTM = 6000 V; UL 1577 certified, VISO = 3750 V(rms) for 1 min, ≥ 100 kV/μs CMTI, active Miller clamp, DESAT, short circuit clamping, FAULT-RST, TLTO | ||||
PFC | 25 | Single low-side | 1ED44176N01F | integrated overcurrent protection (±5%), fault reporting, and enable functionality |
TRENCHSTOP™ IGBT+Diode Rapid Diode CoolMOS™ MOSFET CIPOS™ Mini |
IRS44273L | small, easy-to-use package |
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20 | 1EDN8511B | fast propagation delay and high drive Dual current | |||
20 | Dual low-side | 2EDN8524F | |||
25 | IRS4427S | industry proven | |||
SMPS (<3 kW) |
20 | Dual low-side | 2EDN8524F | non-inverting driver with CMOS inputs | TRENCHSTOP™ IGBT+Diode CoolMOS™ MOSFET |
600 | High and low-side | IRS2186(4)S | with high current | ||
Brake chopper (<3.5 kW) |
25 | Single low-side | IRS44273L | non-inverting, with CMOS inputs in small 5 pin SOT-23 package | TRENCHSTOP™ IGBT+Diode IKW40N120T2, IKQ50N120CT2, IKQ75N120CT2 |
1200 | Single high-side | 1EDI05I12AF | Functional isolation, ≥ 100 kV/μs CMTI, short circuit clamping, separate sink/source output (AF only), active Miller clamp (MF only) | ||
1EDI10I12MF |
*Coming soon
Application | Driver Voltage class [V] | Configuration | Driver | Description | Suitable switches |
On-board charger & DC-DC converter | 20 | Dual low-side | AUIRB24427S | Booster for automotive motor drives above 10 kW, peak current up to ±15 A, support for active clamping with very fast reaction time, active clamping disable, ASC input signals | Automotive IGBT Discretes CoolMOS™ CPA CoolMOS™ CFDA |
100 | Half bridge | AUIR2085S | Enable half-bridge DC-bus converters for 48 V distributed systems with reduced component count and board space , programmable switching frequency < 500 kHz, adjustable dead-time | ||
200 | Single low-side | AUIRS1170S | Secondary side high speed synchronous rectification controller, ccm operation with SYNC function, > 500 kHz, cycle by cycle MOT check | ||
600 | High and low-side | AUIRS2113S | Tolerant to negative transient voltage, UVLO | ||
AUIRS2191S | Tolerant to negative transient voltage, UVLO, matched propagation delay | ||||
Auxiliary drives (fans, pumps, HVAC, heat pump, PTC heater) | 600 | High and low-side | AUIRS21814S | Tolerant to negative transient voltage, UVLO , matched propagation delay | Automotive IGBT Discretes |
Three-phase | AUIRS2336S | Drives up to six IGBT/MOSFET power devices, OCP, over-temperature shutdown input, advanced input filter, integrated dead-time protection, shoot-through protection, UVLO | |||
700 | Single high-side | AUIR2114SS* | UVLO on both supply lines (with hysteresis), desaturation detection on both sides, with internal biasing resistor, soft shutdown function and pin | Automotive IGBT Discretes AUIRG4PH50S, AUIRGDC0250 |
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Wireless in-cabin phone charging | 600 | High and low-side | AUIRS2301S | Tolerant to negative transient voltage, UVLO, matched propagation delay | Automotive MOSFET |
Application | Driver Voltage class [V] | Configuration | Driver | Description | Suitable switches |
Main inverter | 400 | Single high-side | 1EBN1001AE | IGBT / MOSFET gate driver booster for automotive motor drives above 10 kW, peak current up to ±15 A, support for active clamping with very fast reaction time, active clamping disable, ASC Input signals | Automotive IGBT Discretes |
1200 | 1EDI2001AS | On-chip galvanic insulation (up to 6 kV), support of 5 V logic levels, 16-bit standard SPI interface (up to 2 MBaud) with daisy chain support, enable input pin, pseudo-differential inputs for critical signals. Power-on reset pin, debug mode, pulse suppressor, TLTO | |||
1EDI2002AS | |||||
1EDI2010AS | On-chip galvanic insulation (up to 6 kV), support of 5 V logic levels, 16-bit standard SPI interface (up to 2 MBaud) with daisy chain support, enable input pin, pseudo-differential inputs for critical signals. Power-on reset pin, debug mode, pulse suppressor, TLTO, integrated ADC |
Application | Driver Voltage class [V] | Configuration | Driver | Description | Suitable switches |
DC-DC (<3 kW) | 600 | High and low-side | IRS2113S/M | with SD | TRENCHSTOP™ IGBT+Diode CoolMOS™ MOSFET |
IRS2186(4)S | with high current | ||||
1200 | Single high-side | 1EDI05I12AF | Functional isolation, ≥ 100 kV/μs CMTI, separate sink/source output, short circuit clamping | TRENCHSTOP™ IGBT+Diode CoolMOS™ MOSFET |
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DC-DC (<30 kW) | 1200 | Single high-side | 1EDC20H12AH | Functional isolation, ≥ 100 kV/μs CMTI, separate sink/source output, short circuit clamping, 125-ns propagation delay | CoolSiC™ SiC MOSFET |
1EDI40I12AF | Functional isolation, ≥ 100 kV/μs CMTI, separate sink/source output, short circuit clamping | ||||
DC-DC (<60 kW) | 650 | Dual high-side | 2EDS8265H | Reinforced isolation, 150 kV/μs CMTI, EN | CoolMOS™ MOSFET IPW65R041CFD, IPW65R080CFD, IPW60R018CFD7, IPW60R040CFD7, IPW60R070CFD7, IPW60R090CFD7, IPL60R060CFD7 |
1200 | Single high-side | 1EDC60H12AH | Functional isolation, ≥ 100 kV/μs CMTI, separate sink/source output, short circuit clamp, 125-ns propagation delay | CoolSiC™ SiC MOSFET module EasyPACK™ 1B/2B module EconoPIM™ 2 module EconoPACK™ 2/3/4 module EconoDUAL™ 3 module |
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1EDS20I12SV | Reinforced isolation, VDE 0884-10, VIORM = 1420 V, VIOTM = 8000 V; UL1577, VISO = 5000 V(rms), slew rate control, soft shutdown, DESAT, FAULT-RPT, OCP, TLTO | ||||
PFC | 650 | Dual high-side | 2EDF7275F | Galvanically isolated | TRENCHSTOP™ 5 H5 CoolMOS™ MOSFET |
2EDF7175F | |||||
1200 | Single high-side | 1EDI40I12AH | Functional isolation, ≥ 100 kV/μs separate sink/source output, short circuit clamping | ||
801 | Single low-side | 1EDN8550B | Non-inverting signal Low-side driver with truly differential inputs, especially for kelvin source 4 pin device in PFC boost | ||
20 | Single low-side | 1EDN8511B | Non-inverting single low-side driver with CMOS inputs in small 6-pin SOT-23 package | ||
25 | Dual low-side | IRS4427S | Non-inverting dual low-side driver with CMOS inputs |
Note 1: For special cases as 1EDNx550 (1EDN-TDI), voltage class is defined as maximum bus voltage (highest floating voltage it can manage).
Application | Driver Voltage class [V] | Configuration | Driver | Description | Suitable switches |
PFC | 25 | Single low-side | 1ED44176N01F | OCP (±5%), EN, FAULT-RPT, programmable fault clear time | CoolMOS™ MOSFET IPP60R060P7, IPP60R080P7, IPP60R099P7, IPP60R120P7, IPP60R180P7, IPP60R280P7, IPP60R360P7 |
IRS44273L | Non-inverting single low-side driver with CMOS inputs in small 5 pin SOT-23 package |
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20 | 1EDN8511B | Non-inverting single low-side driver with CMOS inputs in small 6 pin SOT-23 package | |||
25 | Dual low-side | IRS4427S | Non-inverting dual low-side driver with CMOS inputs | ||
20 | 2EDN8524F | Non-inverting dual low-side driver with CMOS inputs | |||
HS buck (<100 W) | 100 | Single high-side | IRS10752L | Driver in small 6 pin SOT-23 package | CoolMOS™ MOSFET IPP80R280P7, IPP80R360P7, IPP80R450P7, IPP80R600P7, IPP80R750P7, IPP80R900P7, IPP80R1K2P7, IPP80R1K4P7, IPD80R2K0P7, IPD80R2K4P7, IPD80R3K3P7, IPD80R4K5P7 |
200 | IRS20752L | ||||
600 | IRS2117S | Driver in DSO-8 package | |||
IRS25752L | Driver in small 6 pin SOT-23 package | ||||
HB(LLC) (<200 W) | 650 | High and low-side | 2ED2106S06* | Infineon SOI technology with integrated bootstrap diode | CoolMOS™ MOSFET IPP60R060P7, IPP60R080P7, IPP60R099P7, IPP60R120P7, IPP60R180P7, IPP60R280P7, IPP60R360P7 |
600 | IRS2101S | Driver in DSO-8 package | |||
650 | Half-bridge | 2ED2304S06F | Infineon SOI technology with integrated bootstrap diode | ||
600 | IRS2153(1)DS | Self-oscillating, Integrated bootstrap FET, SD and SD-PROG | |||
Sync buck | 200 | High and low-side | IR2010S | Driver in DSO-8 package | CoolMOS™ MOSFET IPP80R280P7, IPP80R360P7, IPP80R450P7, IPP80R600P7, IPP80R750P7, IPP80R900P7, IPP80R1K2P7, IPP80R1K4P7, IPD80R2K0P7, IPD80R2K4P7, IPD80R2K4P7, IPD80R4K5P7 |
600 | Half-bridge | 2EDL05N06PF | Infineon SOI technology with integrated bootstrap diode |
* Coming soon
Application | Driver Voltage class [V] | Configuration | Driver | Description | Suitable switches |
Motor inverter /BLDC (<2 kW) | 200 | High and low-side | IRS2005S/M | with VCC & VBS UVLO | StrongIRFET™ OptiMOS™ 3/5 |
IRS2011S | |||||
Half-bridge | IRS2008S/M | ||||
IRS2007S/M | |||||
Three-phase | 6EDL04N02PR | Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT | |||
6ED003L02-F2 | Infineon SOI technology with OCP, EN, FAULT-RPT | ||||
Motor inverter (<15 kW) | 650 | Dual high-side | 2EDF7275F | Functional isolation, disable | TRENCHSTOP™ IGBT+Diode
OptiMOS™ 3/5 |
2EDF7175F | |||||
600 | High and low-side | IRS21867S | with Low UVLO (6 V/5.5 V) | ||
IRS2301S | in DSO-8 package | ||||
Half-bridge | 2EDL05N06PF | Infineon SOI technology with integrated bootstrap diode | |||
IRS2302S | with SD | ||||
Three-phase | 6ED003L06-F2 | Infineon SOI technology with OCP, EN, FAULT-RPT | |||
6EDL04N06PT | Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT | ||||
Motor inverter (<30 kW) | 600 | Half-bridge | IRS2183S | in DSO-8 package | CoolMOS™ MOSFET EasyPIM™ 1B/2B module family |
2EDL23N06PJ | Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT | ||||
1200 | Single high-side | 1EDI60(I,N)12AF | Functional isolation, ≥ 100 kV/μs CMTI, separate sink/source output, short circuit clamping | EasyPIM™ 1B/2B module family EasyPACK™ 1B module family |
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Three-phase | 6ED2230S12T* | Infineon SOI technology with integrated bootstrap diode, OCP (±5%), EN, FAULT-RPT | EasyPIM™ 1B/2B module family FP15R12W1T4_B11, FP15R12W2T4 |
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IR2235S/J | with OCP, SD, OPAMP, FAULT-RPT |
Application | Driver Voltage class [V] | Configuration | Driver | Description | Suitable switches |
PFC | 25 | Single low-side | 1ED44176N01F | OCP (±5%), EN, FAULT-RPT, programmable fault clear time | TRENCHSTOP™ Rapid diode CoolMOS™ MOSFET CIPOS™ Mini |
IRS44273L | non-inverting single low-side driver with CMOS inputs in small SOT-23 package | ||||
20 | 1EDN8511B | ||||
25 | Dual low-side | IRS4427S | non-inverting dual low-side driver with CMOS inputs | ||
20 | 2EDN8524F | ||||
600 | Half-bridge | 2EDL23(I,N)06PJ | Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT | ||
Inverter/ compressor/ drive/ fans | 650 | Half-bridge | 2ED2304S06F | Infineon SOI technology with integrated bootstrap diode | TRENCHSTOP™ IGBT+Diode TRENCHSTOP™ IGBT6 CoolMOS™ MOSFET |
600 | IRS2890DS | Integrated bootstrap FET, FAULT-RPT, OCP | |||
2EDL23(I,N)06PJ | Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT | ||||
2EDL05(I,N)06PF | Infineon SOI technology with integrated bootstrap diode | ||||
Three-phase | 6EDL04(I,N)06xT | Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT | |||
IRS2334S/M | in DSO-20 300mil, VQFN-28 package | ||||
6ED003L06-F2 | Infineon SOI technology with OCP, EN, FAULT-RPT | ||||
SMPS (100 W) | 20 | Dual low-side | 2EDN8524F | Non-inverting dual low-side driver with CMOS inputs | CoolMOS™ MOSFET IPP60R060P7, IPP60R080P7, IPP60R099P7, IPP60R120P7, IPP60R180P7, IPP60R280P7, IPP60R360P7 |
25 | IRS4427S | ||||
650 | High and low-side | 2ED2106S06* | Infineon SOI technology with integrated bootstrap diode | ||
600 | IRS2186(4)S | with high current | |||
Half-bridge | IRS2153(1)DS | Self-oscillating, Integrated bootstrap FET, SD and SD-PROG |
*coming soon
Application | Driver Voltage class [V] | Configuration | Driver | Description | Suitable switches |
Solar inverter Boost / SMPS | 25 | Single low-side | 1ED44176N01F | OCP (±5%), EN, FAULT-RPT, programmable fault clear time | CoolMOS™ MOSFET IPW65R019C7, IPW65R065C7, IPW65R095C7, IPW65R190C7 |
IRS44273L | non-inverting low-side driver with Dual CMOS inputs | ||||
Dual low-side | IRS4427S | ||||
20 | 2EDN8524F | ||||
1200 | Single high-side | 1EDI20N12AF | Functional isolation, ≥ 100 kV/μs CMTI, separate sink/source output, short circuit clamping, 125-ns propagation delay | CoolSiC™ SiC MOSFET module EasyPACK™ 1B/2B module family CoolMOS™ MOSFET |
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1EDC60H12AH | |||||
Solar micro inverter DC-AC (<200 W) | 650 | Half-bridge | 2ED2304S06F | Infineon SOI technology with integrated bootstrap diode | OptiMOS™ 5 CoolMOS™ MOSFET |
600 | IR2114SS | DESAT, Synchronization, SD-SOFT, FAULT-RPT | |||
2EDL05N06PJ | Infineon SOI technology with integrated bootstrap diode | ||||
650 | Dual high-side | 2EDF7275F | Functional isolation | ||
1200 | Single high-side | 1EDI20N12AF | Functional isolation, ≥ 100 kV/μs CMTI, separate sink/source output, short circuit clamping, 120-ns propagation delay | ||
Solar string / central inverter DC-AC (>200 W) | 1EDI60(I,N)12AF | CoolSiC™ SiC MOSFET CoolSiC™ SiC MOSFET module TRENCHSTOP™ IGBT+Diode EasyPACK™ 1B/2B module EconoPACK™ 2 module EconoDUAL™ 3 module EconoPack™+ module |
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1ED020I12-F2 | Functional isolation, ≥ 100 kV/μs CMTI, active Miller clamp, DESAT short circuit clamping, FAULT-RST | ||||
Dual high-side | 2ED020I12-F2 | ||||
High and low-side | IR2213S | with SD and Separate power supply | |||
Half-bridge | IR2214SS | with DESAT, Synchronization, SD-SOFT, FAULT-RPT | |||
Three-phase | 6ED2230S12T* | Infineon SOI technology with integrated bootstrap diode, OCP (±5%), EN, FAULT-RPT | TRENCHSTOP™ IGBT+Diode |
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Heat pump inverter (<2 kW) | 650 | Half-bridge | 2ED2304S06F | Infineon SOI technology with integrated bootstrap diode | |
600 | 2EDL05I06PF | ||||
Three-phase | 6EDL04I06xT | Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT | |||
Heat pump inverter (>2 kW) | 1200 | Single high-side | 1EDI20I12AF | Functional isolation, ≥ 100 kV/μs CMTI, separate sink/source output, short circuit clamping | CoolSiC™ SiC MOSFET module TRENCHSTOP™ IGBT+diode EasyPACK™ 1B/2B module EconoPIM™ 2 module |
High and low side | IR2213S | with SD and separate power supply | |||
Half-bridge | IR2214SS | with DESAT, Synchronization, SD-SOFT, FAULT-RPT | |||
Three-phase | 6ED2230S12T* | Infineon 1200-V SOI technology with integrated bootstrap diode, OCP (±5%), EN, FAULT-RPT | TRENCHSTOP™ IGBT+diode |
*Coming soon
Application | Driver Voltage class [V] | Configuration | Driver | Description | Suitable switches |
PFC | 25 | Single low-side | 1ED44176N01F | OCP (±5%), EN, FAULT-RPT, programmable fault clear time | TRENCHSTOP™ Rapid Diode CoolMOS™ MOSFET |
IRS44273L | Non-inverting low-side driver with CMOS inputs | ||||
20 | 1EDN8511B | ||||
25 | Dual low-side | IRS4427S | |||
20 | 2EDN8524F | ||||
Battery powered Motor Inverter / BLDC (<1 kW) | 801 | Single low-side | 1EDN7550B | Single-channel gate driver IC with truly differential inputs | |
200 | High and low side | IRS2005S/M | with VCC & VBS UVLO, and shutdown (IRS2008 only) | StrongIRFET™ OptiMOS™ 5 |
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IRS2011S | |||||
Half-bridge | IRS2008S/M | ||||
IRS2007S/M | |||||
Three-phase | 6EDL04N02PR | Infineon SOI technology with integrated bootstrap diode (6EDL only), OCP, EN, FAULT-RPT | |||
6ED003L02-F2 | |||||
Inverter / Compressor / Drive | 650 | Half-bridge | 2ED2304S06F | Infineon SOI technology with integrated bootstrap diode | TRENCHSTOP™ IGBT+Diode TRENCHSTOP™ IGBT6 TRENCHSTOP™ RC-H5 |
600 | IRS2890DS | Integrated bootstrap FET, FAULT-RPT, OCP | |||
IRS2183S | in DSO-8 package | ||||
2EDL23I06PJ | Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT | ||||
2EDL05(I,N)06PF | Infineon SOI technology with integrated bootstrap diode | ||||
High and low side | IRS2113S/M | with SD | |||
IRS2186(4)S | with high current | ||||
Three-phase | 6EDL04(I,N)06xT | Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT | |||
IRS2334S/M | in DSO-20 300 mil, VQFN-28 package |
Note 1: For special cases as 1EDNx550 (1EDN-TDI), voltage class is defined as maximum bus voltage (highest floating voltage it can manage).
* Coming soon
Application | Driver Voltage class [V] | Configuration | Driver | Description | Suitable switches |
PFC | 801 | Single low-side | 1EDN8550B | Non-inverting signal low side driver with truly differential inputs, especially for kelvin source 4 pin device in PFC boost | CoolMOS™ 7 series |
25 | 1ED44176N01F | OCP (±5%), EN, FAULT-RPT, programmable fault clear time | |||
20 | 1EDN8511B | non-inverting signal low-side driver with CMOS inputs | |||
Dual low-side | 2EDN8524F | non-inverting dual low-side driver with CMOS inputs | |||
Totem pole PFC | 650 | Single high-side | 1EDF5673F | Functional isolation | CoolGaN™ |
Dual high-side | 2EDF7275F | CoolMOS™ 7 series | |||
600 | Half-bridge | 2EDL23I06PJ | Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT | ||
Vienna rectifier | 650 | Dual high-side | 2EDF8275F | Functional isolation, 150 kV/μs CMTI, EN | |
Sync rectifier | 25 | Single low-side | 1ED44176N01F | OCP (±5%), EN, FAULT-RPT, programmable fault clear time | |
201 | 1EDN7550B | Non-inverting low-side driver with truly differential inputs | |||
20 | Dual low-side | 2EDN7523F | Non-inverting dual low-side driver with CMOS inputs | ||
200 | IR11688S | Dual synchronous rectification control IC | |||
250 | Dual high-side | 2EDF7275K | Functional isolation, 150 kV/μs CMTI, Disable | ||
Single high-side | 1EDF5673K | Functional isolation | CoolGaN™ | ||
LLC/ZVS PSFB | 650 | Single high-side | 1EDS5663H | Reinforced isolation, 200 kV/μs CMTI, EN | |
Dual high-side | 2EDS8265H | Reinforced isolation, 150 kV/μs CMTI, EN | CoolMOS™ 7 series | ||
600 | High and low-side | IRS2186(4)S | with high current |
Note 1: For special cases as 1EDNx550 (1EDN-TDI), voltage class is defined as maximum bus voltage (highest floating voltage it can manage).
*Coming soon
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.