Gate Driver ICs
EiceDRIVER™ gate driver ICs for MOSFETs, IGBTs, SiC MOSFETs and GaN HEMTs
Gate Driver ICs subcategoriesCollapse all subcategories Expand all subcategories
- High Side Drivers
- Low Side Drivers
- High and Low Side Drivers
- Half-Bridge Drivers
- Synchronous-Buck Drivers
- Full Bridge Drivers
- Three Phase Drivers
- Driver Boards
- Gate Driver Support ICs
- Automotive Gate Driver ICs
- Gate Driver ICs for GaN HEMTs
Every switch needs a driver – the right driver makes a difference. Power electronics applications employ power device switches. And power device switches require optimum gate drive solutions. That’s why we offer more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.
EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1-A up to 10-A. Robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection, make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. Download your copy of the Gate Driver Selection Guide now.
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EiceDRIVER™ gate driver IC technologies
Decades of application expertise and technology development at both Infineon and International Rectifier have produced a portfolio of gate driver ICs for use with silicon and wide-bandgap power devices, such as MOSFETs, discrete IGBTs, IGBT modules, SiC MOSFETs and GaN HEMTs. We offer excellent product families of galvanic isolated gate drivers, automotive qualifies gate drivers, 200 V, 500-700 V, 1200 V level shift gate drivers, and non-isolated low-side drivers.
Our portfolio spans a variety of configurations, voltage classes, isolation levels, protection features, and package options. State-of-the-art discrete switch families require tuning of gate drive circuits to take full advantage of their capacity and capabilities. An optimum gate drive configuration is essential for all power switches, whether they are in discrete form or in a power module.
EiceDRIVER™ gate driver IC applications
Our EiceDRIVER™ gate drivers provide advanced features such as integrated bootstrap diode(BSD), over current protection, shutdown, fault reporting, enable, input filter, OPAMP, DESAT, programmable deadtime, shoot through protection, active miller clamp, active shutdown, separate sink and source outputs, short circuit clamping, soft shutdown, two level turn off, galvanic isolation(functional, basic and reinforced), etc.
Ideal solutions are available for hundreds of end applications in such markets as automotive, industrial motor drives, solar inverters, EV charging, robotics, UPS, server and telecom power supply, small and major home appliances, battery-driven applications, and high-voltage lighting.
In this webinar, we will visit a selected Gate Driver IC portfolio which shares a common set of strengths.
Tailored Gate Driver Solutions by Infineon, This video explains why gate driver ICs are well suited for many applications such as Automotive, Major Home Appliances, Industrial Motor Drives, Solar Inverters, UPS, Switched-Mode Power Supplies, and High-Voltage Lighting.
Do you want to know more about Infineon´s gate drivers? Watch our introduction video and become familiar with our product portfolio.
1200 V Silicon-On-Insulators level-shift gate drivers from the market leader. This video demonstrates the advantages of products with Infineon SOI. E.g. Integrated bootstrap diode, Low level-shift losses - saving space and cost.
EiceDRIVER™ galvanically isolated gate drivers use the unique coreless transformer (CT) technology to provide signal transfer across the galvanic isolation.
Gate drivers are key components to enable applications, such as EV charging, Solar or Energy Storage Systems. But why are gate drivers so important? Stay tuned!
- Get a good overview about motivation, market and technical details about Fuel cell systems and sub-systems
- Highlight IFX as a one-stop shop for suitable products on a Product to System level
Discover the importance of using fast output clamping for an output-side supply less than UVLO in a fast-switching application.
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
- EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
- The CT based isolated gate driver offers higher current, lower power consumption, better CMTI and best in class propagation delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc
Watch our webinar to discover more about technological positioning of silicon versus SiC and GaN power devices for both high and low power applications.
We offer a large portfolio of level shift high voltage gate drivers – silicon-on-insulator (SOI) and junction isolated (JI) technologies. Learn about the advantages of Infineon SOI gate driver: integrated bootstrap diode, Low level-shift losses, saving space and cost, and negative VS robustness.