CoolSiC™ Schottky Diodes 2000 V G5

The diode family enables a new level of efficiency and design simplification

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Overview

CoolSiC™ Schottky diode 2000 V, enables a transition to higher power levels with minimized power losses, which can be achieved through increased DC link voltage. It’s the first discrete silicon carbide diode on the market with a breakdown voltage of 2000 V.

Key Features

  • No reverse recovery current
  • No forward recovery
  • High surge current capability
  • Temp. independent switch behavior
  • Low forward voltage
  • Tight forward voltage distribution
  • Specified dv/dt ruggedness
  • .XT interconnection technology

Products

About

The CoolSiC™ Schottky diode 2000 V G5 family allows developers to achieve higher power levels in their applications with only half the component count of 1200 V solutions. This simplifies the overall design and enables a smooth transition from multi-level topologies to 2-level topologies.

The product family is suitable for applications with DC link voltages up to 1500 VDC and offers current ratings from 10 to 80 A. 

The 2000 V diode family is a perfect match for the CoolSiC MOSFETs 2000 V in the TO-247Plus-4 HCC package and is ideal for higher DC link voltage applications such as in solar and EV charging applications.

The CoolSiC™ Schottky diode 2000 V G5 family incorporate important key benefits, e.g. the high DC-link systems up to 1500 VDC, minimized conduction losses, no reverse recovery current, high power with half the part count, topology simplification and increased reliability.

The CoolSiC™ Schottky diode 2000 V G5 family allows developers to achieve higher power levels in their applications with only half the component count of 1200 V solutions. This simplifies the overall design and enables a smooth transition from multi-level topologies to 2-level topologies.

The product family is suitable for applications with DC link voltages up to 1500 VDC and offers current ratings from 10 to 80 A. 

The 2000 V diode family is a perfect match for the CoolSiC MOSFETs 2000 V in the TO-247Plus-4 HCC package and is ideal for higher DC link voltage applications such as in solar and EV charging applications.

The CoolSiC™ Schottky diode 2000 V G5 family incorporate important key benefits, e.g. the high DC-link systems up to 1500 VDC, minimized conduction losses, no reverse recovery current, high power with half the part count, topology simplification and increased reliability.

Documents

Design resources

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