600V CoolMOS™ P7 - Infineon Technologies

Überblick

Perfect combination between high efficiency and ease-of-use

The 600V CoolMOS™ P7 superjunction (SJ) MOSFET family is a general purpose series, targeting a broad variety of applications, ranging from low power SMPS up to the highest power levels.

In the low power arena it is the successor of the 600V CoolMOS™ CE, and for high power SPMS applications it is the replacement for the 600V CoolMOS™ P6, which makes it the perfect choice for applications, such as chargers, adapters, lighting, TV power supply, PC power supply, solar, small light electric vehicle, server power supply, telecom power supply, DC electric vehicle (EV) charging. 600V CoolMOS™ P7 is Infineon’s most well balanced CoolMOS™ technology in terms of combining ease-of-use and excellent efficiency performance. >more

Produkte

Details

Compared to its predecessors, 600V CoolMOS™ P7 SJ MOSFETs offer highest efficiency and improved power density due to the significantly reduced Q_G and E_oss levels, as well as optimized R_DS(on).

The carefully selected integrated gate resistors enable very low ringing tendency, and, due to its outstanding robustness of body diode against hard commutation, it is suitable for hard, as well as so switching topologies, like LLC.

In addition, the feature of an excellent ESD capabilty helps to improve the quality in manufacturing. The 600V CoolMOS™ P7 offers a wide range of R_DS(on)/package combinations, including THD, as well as SMD devices, at an R_DS(on) granularity from 24mΩ to 600mΩ and comes along with the most competitive price/performance ratio of all 600V CoolMOS™ offerings.

Key features

Suitable for hard and so switching (PFC and LLC) due to an outstanding commutation ruggedness
Optimized balance between efficiency and ease-of-use
Significant reduction of switching and conduction losses leading to low MOSFET temperature
Excellent ESD robustness >2kV (HBM) for all products
Better R_DS(on//package products compared to competition
Large portfolio with granular R_DS(on) selection qualified for a variety of industrial and consumer applications

Key benefits

Ease-of-use and fast design-in through low ringing tendency and usage across PFC and PWM stages
Improved efficiency and simplified thermal management due to low switching and conduction losses
Higher manufacturing quality due to >2kV ESD protection
Increased power density solutions enabled by using products with smaller footprint
Suitable for a wide variety of applications and power ranges

Infineon picture Power MOSFET 600V P7 graph

600V CoolMOS™ P7 achieves up to 1.5% better efficiency and 4.2°C lower MOSFET temperature versus competitor offerings. Its gate charge Q _g and E _oss are 30-60 percent lower compared to previous CoolMOS™ families and competition, which leads to reduced driving and switching losses that allow high efficiency in various power classes. Furthermore, the optimized R _DS(on) enables smaller footprints and higher power density.