There is a continuous need for higher power capability in most applications today. In some applications, a single MOSFET is not enough. In these applications, designers must share the current load among multiple MOSFETs in parallel.

Connecting MOSFETs in parallel while ensuring a rugged design which includes safe operation and reliability is a challenge. Current sharing among devices in parallel is often not well understood and can cause unexpected system failures in the field if not done properly.

Infineon has developed collaterals to explain these challenges and offer solutions to help designers apply the correct methodology in designing power converters. 

A demoboard showcasing MOSFETs in parallel is available: Low voltage drives scalable power demonstration board

Paralleling becomes more of a challenge under switching conditions and more so as frequency increases. When paralleling MOSFETs, it is essential to understand and ensure proper current balance among the MOSFETs, comprehend MOSFET parameters affecting current sharing, conduction losses, switching losses, and the importance of gate threshold voltage on the device temperature.

Infineon’s best-in-class OptiMOS™ LV/MV MOSFETs and CoolMOS™ HV MOSFETs are designed to deliver ultimate performance in combination with highest efficiency and power density. Learn more about our innovative solutions

Get an introduction on why several MOSFETs connected in parallel are required in high current applications such as motor drives.

This video will show the MOSFET’s parameters affecting current sharing and quantify the current and power dissipation imbalance by bench test demonstration.

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This training qualitatively and quantitatively describes the current sharing in paralleled MOSFETs.

In this webinar, Infineon's expert, Francesca Pastorelli, explains how to select the right power MOSFET package for your design. Participants learn how to overcome challenges like thermal behavior, high current, and high power density in SMPS, BMS, and motor drive applications using Infineon’s newly released packages for power MOSFETs from 20 V to 300 V.

 

In this webinar, we will talk about the various characteristics of MOSFETs and how the technology they are developed in plays a role in their suitability for different applications. You will hear how the application impacts the choice of FETs and why FETs are offered in different technologies.

Download for further information

Paralleling becomes more of a challenge under switching conditions and more so as frequency increases. When paralleling MOSFETs, it is essential to understand and ensure proper current balance among the MOSFETs, comprehend MOSFET parameters affecting current sharing, conduction losses, switching losses, and the importance of gate threshold voltage on the device temperature.

Infineon’s best-in-class OptiMOS™ LV/MV MOSFETs and CoolMOS™ HV MOSFETs are designed to deliver ultimate performance in combination with highest efficiency and power density. Learn more about our innovative solutions

Get an introduction on why several MOSFETs connected in parallel are required in high current applications such as motor drives.

This video will show the MOSFET’s parameters affecting current sharing and quantify the current and power dissipation imbalance by bench test demonstration.

.
.
.

This training qualitatively and quantitatively describes the current sharing in paralleled MOSFETs.

In this webinar, Infineon's expert, Francesca Pastorelli, explains how to select the right power MOSFET package for your design. Participants learn how to overcome challenges like thermal behavior, high current, and high power density in SMPS, BMS, and motor drive applications using Infineon’s newly released packages for power MOSFETs from 20 V to 300 V.

 

In this webinar, we will talk about the various characteristics of MOSFETs and how the technology they are developed in plays a role in their suitability for different applications. You will hear how the application impacts the choice of FETs and why FETs are offered in different technologies.

Download for further information