OptiMOS™ 6 80 V - the latest power MOSFET technology setting the new industry standard for high power density designs

OptiMOS™ 6 80 V - the latest power MOSFET technology setting the new industry benchmark performance with a wide portfolio offering including PQFN 3.3x3.3 with RDS(on) max ranges from 5.3 mΩ to 15.7 mΩ, and PQFN 5x6 (SuperSO8) with RDS(on) max ranges from 1.45 mΩ to 15.1 mΩ.

Compared to the latest OptiMOS™ 5 technology, Infineon's leading thin wafer technology enables significant performance improvement, including  >24% lower RDS(on) and ~40% improved  FOM Qg x RDS(on) and FOM Qgd x RDS(on) in SuperSO8, and >28% lower RDS(on) and ~40% improved FOMs in PQFN 3.3x3.3. The performance improvement enables easier thermal design and less paralleling, leading to higher system efficiency, higher power density and system cost reduction.

Infineon’s OptiMOS™ 6 80 V family is ideal for high switching frequency applications such as telecom, server and solar, and thanks to the performance improvement OptiMOS™ 6 80 V can be used also in battery powered applications as well as in battery management systems (BMS).

Key features:

  • Benchmark performances
    • >24% lower RDS(on) and ~40% improved FOMs compared to OptiMOS™ 5 best-in-class in SuperSO8
    • >28% lower RDS(on) and ~40% improved FOMs compared to OptiMOS™ 5 best-in-class in PQFN 3.3x3.3
  • Industry standard package portfolio with RDS(on) option for best cost/performance selection
  • Normal level gate drive offers immunity to false turn-on in noisy environments
  • 175°C rated for improved power, SOA, and avalanche current ratings versus 150°C rated devices
  • Infineon’s industrial qualification for benchmark reliability

Key benefits:

  • Lower conduction losses than equivalent OptiMOS™ 5
  • Lower switching losses than equivalent OptiMOS™ 5
  • Robust reliable performance
  • Wide portfolio offering for supply chain flexibility

Learn more about OptiMOS™ 6 power MOSFET 80 V

How to choose the right MOSFET

OptiMOS™ 6  80 V is the latest power MOSFET technology completing the Infineon industrial portfolio together with OptiMOS™ 5 and OptiMOS™ 3. These technologies are the perfect fit if you are looking for high performance applications, industry's best figure of merit and high efficiency and power density.

Infineon solutions in 80 V
Infineon solutions in 80 V
Infineon solutions in 80 V

Performance overview (RDS(on), Qg, FOM, SOA)

optimos 6 80v infineon mosfet performance overview
optimos 6 80v infineon mosfet performance overview
optimos 6 80v infineon mosfet performance overview

RDS(on) is one of the key parameters of a MOSFET and denotes the on-state resistance measured between drain and source terminals.

A lower RDS(on) value yields:

  • Reduction in conduction losses
  • Less or avoided paralleling of parts, saving costs and PCB real estate leading to increased power density!

OptiMOS™ 6 80 V in SuperSO8 package (picture 1) achieves:

  • 24% lower on-state resistance compared to OptiMOS™ 5
  • A low RDS(on) value as new OptiMOS™ 6 80 V products have leads to:
    • Increased power density
    • ~20% reduction in conduction losses compared to next best alternative

OptiMOS™ 6 80 V in PQFN 3.3x3.3 package (picture 2) achieves:

29% lower on-state resistance compared to OptiMOS™ 5

A low RDS(on) value such as in the new OptiMOS™ 6 80 V products leads to:

  • Increased power density
  • ~30% reduction in conduction losses compared to OptiMOS™ 5
Optimos 6 80v mosfet total gate charge
Optimos 6 80v mosfet total gate charge
Optimos 6 80v mosfet total gate charge

Total gate charge (Qg) is the amount of charge that needs to be supplied to the gate to turn on (drive) the MOSFET, for some specified conditions. A small value of Qg is highly desirable in high-switching frequency applications, since it directly impacts on the driving losses.

The gate-to-drain charge Qgd represents the part of gate charge associated with the Miller plateau extension, required to complete the drain voltage transition. For the same driving circuit, a lower Qgd means faster voltage transients, hence lower switching losses. This is of utmost importance in high-switching frequency, hard-switched SMPS, where switching losses play a significant role.

Compared with similar RDS(on) products, OptiMOS™ 6 80 V achieves ~40% improvement in Qg and in Qgd compared to OptiMOS™ 5.

Optimos 6 and 5 80v figure of merit
Optimos 6 and 5 80v figure of merit
Optimos 6 and 5 80v figure of merit

The MOSFET “figure of merit” (FOM) is a performance indicator of a technology which accounts for both conduction and switching losses. FOM is calculated as on-resistance (RDS(on)) times total gate charge (Qg) and is usually expressed in mΩ x nC.

optimos 6 100v safe operating area
optimos 6 100v safe operating area
optimos 6 100v safe operating area

The SOA is a diagram defined by the voltage and current conditions over which a MOSFET can be operated without incurring into permanent damage or degradation.

The comparison between SOAs for best-in-class OptiMOS™ 5 (1.9 mΩ) and OptiMOS™ 6 (1.5 mΩ) SuperSO8 products, highlights that new technology in 80 V shows significant improvement in the linear region of operation.

OptiMOS™ 6 80 V in SuperSO8/PQFN 3.3x3.3

Target applications and demonstrated value proposition

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Application test results

Infineon OptiMOS™ 6 80 V family is ideal for high switching frequency applications such as telecom, server and solar, and thanks to the performance improvement OptiMOS™ 6 80 V can be used also in battery powered application as well as in battery management system (BMS).

 The value proposition of OptiMOS™ 6 80 V has been clearly demonstrated in application test:

in datacom soft-switching LLC 1 kW ¼ Brick application: OptiMOS™ 6 80 V ISC014N08NM6 (1.45 mΩ) with industry´s lowest RDS(on) in PQFN 5x6 package enables to replace two OptiMOS™ 5 BSC030N08NS5 (3.0 mΩ). Efficiency also improves up to 0.8%, thanks to improvement in Qg, Qgd and Ross.

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In telecom hard-switching full-bridge/center-tap, 600 W 1/4th brick application: OptiMOS™ 6 80 V ISZ053N08NM6 (5.3 mΩ) with industry´s lowest RDS(on) in PQFN 3.3x3.3 package enables compact designs with 64% PCB area reduction. Mid- to full-load efficiency also improves up to 0.3%, thanks to lower Qoss, improvement in figures of merit and Qrr.

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Three OptiMOS™ 6 80 V ISC031N08NM6 (3.1 mΩ) can replace four OptiMOS™ 5 BSC040N08NS5 (4.0 mΩ) with space/cost benefits. Efficiency improves across the full-load, up to 0.7%, thanks to lower Qoss, improvement in figures of merit and Qrr.

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OptiMOS™ 6 80 V is currently available in SuperSO8 and PQFN 3.3x3.3 packages.

Documents

Documents

How to choose the right MOSFET

OptiMOS™ 6  80 V is the latest power MOSFET technology completing the Infineon industrial portfolio together with OptiMOS™ 5 and OptiMOS™ 3. These technologies are the perfect fit if you are looking for high performance applications, industry's best figure of merit and high efficiency and power density.

Infineon solutions in 80 V
Infineon solutions in 80 V
Infineon solutions in 80 V

Performance overview (RDS(on), Qg, FOM, SOA)

optimos 6 80v infineon mosfet performance overview
optimos 6 80v infineon mosfet performance overview
optimos 6 80v infineon mosfet performance overview

RDS(on) is one of the key parameters of a MOSFET and denotes the on-state resistance measured between drain and source terminals.

A lower RDS(on) value yields:

  • Reduction in conduction losses
  • Less or avoided paralleling of parts, saving costs and PCB real estate leading to increased power density!

OptiMOS™ 6 80 V in SuperSO8 package (picture 1) achieves:

  • 24% lower on-state resistance compared to OptiMOS™ 5
  • A low RDS(on) value as new OptiMOS™ 6 80 V products have leads to:
    • Increased power density
    • ~20% reduction in conduction losses compared to next best alternative

OptiMOS™ 6 80 V in PQFN 3.3x3.3 package (picture 2) achieves:

29% lower on-state resistance compared to OptiMOS™ 5

A low RDS(on) value such as in the new OptiMOS™ 6 80 V products leads to:

  • Increased power density
  • ~30% reduction in conduction losses compared to OptiMOS™ 5
Optimos 6 80v mosfet total gate charge
Optimos 6 80v mosfet total gate charge
Optimos 6 80v mosfet total gate charge

Total gate charge (Qg) is the amount of charge that needs to be supplied to the gate to turn on (drive) the MOSFET, for some specified conditions. A small value of Qg is highly desirable in high-switching frequency applications, since it directly impacts on the driving losses.

The gate-to-drain charge Qgd represents the part of gate charge associated with the Miller plateau extension, required to complete the drain voltage transition. For the same driving circuit, a lower Qgd means faster voltage transients, hence lower switching losses. This is of utmost importance in high-switching frequency, hard-switched SMPS, where switching losses play a significant role.

Compared with similar RDS(on) products, OptiMOS™ 6 80 V achieves ~40% improvement in Qg and in Qgd compared to OptiMOS™ 5.

Optimos 6 and 5 80v figure of merit
Optimos 6 and 5 80v figure of merit
Optimos 6 and 5 80v figure of merit

The MOSFET “figure of merit” (FOM) is a performance indicator of a technology which accounts for both conduction and switching losses. FOM is calculated as on-resistance (RDS(on)) times total gate charge (Qg) and is usually expressed in mΩ x nC.

optimos 6 100v safe operating area
optimos 6 100v safe operating area
optimos 6 100v safe operating area

The SOA is a diagram defined by the voltage and current conditions over which a MOSFET can be operated without incurring into permanent damage or degradation.

The comparison between SOAs for best-in-class OptiMOS™ 5 (1.9 mΩ) and OptiMOS™ 6 (1.5 mΩ) SuperSO8 products, highlights that new technology in 80 V shows significant improvement in the linear region of operation.

OptiMOS™ 6 80 V in SuperSO8/PQFN 3.3x3.3

Target applications and demonstrated value proposition

.
.
.

Application test results

Infineon OptiMOS™ 6 80 V family is ideal for high switching frequency applications such as telecom, server and solar, and thanks to the performance improvement OptiMOS™ 6 80 V can be used also in battery powered application as well as in battery management system (BMS).

 The value proposition of OptiMOS™ 6 80 V has been clearly demonstrated in application test:

in datacom soft-switching LLC 1 kW ¼ Brick application: OptiMOS™ 6 80 V ISC014N08NM6 (1.45 mΩ) with industry´s lowest RDS(on) in PQFN 5x6 package enables to replace two OptiMOS™ 5 BSC030N08NS5 (3.0 mΩ). Efficiency also improves up to 0.8%, thanks to improvement in Qg, Qgd and Ross.

.
.
.

In telecom hard-switching full-bridge/center-tap, 600 W 1/4th brick application: OptiMOS™ 6 80 V ISZ053N08NM6 (5.3 mΩ) with industry´s lowest RDS(on) in PQFN 3.3x3.3 package enables compact designs with 64% PCB area reduction. Mid- to full-load efficiency also improves up to 0.3%, thanks to lower Qoss, improvement in figures of merit and Qrr.

.
.
.

Three OptiMOS™ 6 80 V ISC031N08NM6 (3.1 mΩ) can replace four OptiMOS™ 5 BSC040N08NS5 (4.0 mΩ) with space/cost benefits. Efficiency improves across the full-load, up to 0.7%, thanks to lower Qoss, improvement in figures of merit and Qrr.

.
.
.

OptiMOS™ 6 80 V is currently available in SuperSO8 and PQFN 3.3x3.3 packages.

Documents

Documents