OptiMOS™ 6 135 V

Where performance meets price efficiency

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Overview

OptiMOS™ 6 135 V targets high-power motor-drive applications such as LEV's, e-forklifts, power and gardening tools, as well as UPS, which predominantly use 72 V and 84 V batteries. This product family effectively bridges the gap between 120 V and 150 V MOSFETs and provides high performance with the lowest Rds(on) enabling efficient power handling and reduced power dissipation.

Key Features

  • Industry's lowest Rds(on) in 135 V
  • Low Vgs(th) spread
  • Ultra-low reverse recovery charge
  • Broad package portfolio

Products

About

  •  System cost reduction
  •  Less paralleling required
  •  Reduced Vds overshoot and switching losses
  •  Higher power density designs

The package portfolio of the OptiMOS™ 6 135 V family includes:

  •  PQFN 3.3x3.3
  •  SuperSO8
  •  TOLG
  •  TO-Leadless
  •  TOLT
  •  D2PAK 7-pin
  •  TO-220

The OptiMOS™ 6 135 V MOSFET technology is a cost-efficient solution optimized for motor drives and also adaptable for other applications such as UPS.

Compared to the OptiMOS™ 5 150 V technology, significant performance improvements are achieved: up to 70% reduction in diode reverse recovery charge (Qrr) and 45 percent lower peak reverse recovery current (Irrm) contribute to lower EMI and lower power losses. The 38 percent reduction in gate threshold voltage spread results in improved dynamic current sharing, leading to increased reliability.

As a result, it enables reduction of paralleled MOSFETs in high-current applications such as:

  • eScooters
  • Forklifts
  • Power tools
  • Gardening tools
  • UPS

  •  System cost reduction
  •  Less paralleling required
  •  Reduced Vds overshoot and switching losses
  •  Higher power density designs

The package portfolio of the OptiMOS™ 6 135 V family includes:

  •  PQFN 3.3x3.3
  •  SuperSO8
  •  TOLG
  •  TO-Leadless
  •  TOLT
  •  D2PAK 7-pin
  •  TO-220

The OptiMOS™ 6 135 V MOSFET technology is a cost-efficient solution optimized for motor drives and also adaptable for other applications such as UPS.

Compared to the OptiMOS™ 5 150 V technology, significant performance improvements are achieved: up to 70% reduction in diode reverse recovery charge (Qrr) and 45 percent lower peak reverse recovery current (Irrm) contribute to lower EMI and lower power losses. The 38 percent reduction in gate threshold voltage spread results in improved dynamic current sharing, leading to increased reliability.

As a result, it enables reduction of paralleled MOSFETs in high-current applications such as:

  • eScooters
  • Forklifts
  • Power tools
  • Gardening tools
  • UPS

Documents

Design resources

Developer community

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