OptiMOS™ 5 150 V

A breakthrough reduction in RDS(on) and reverse recovery charge (Qrr)

anchor

Overview

OptiMOS™ 5 150 V power MOSFETs offer a breakthrough reduction in RDS(on) and Qrr without compromising on FOMgd and FOMOSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge increases commutation ruggedness. 

Key Features

  • Low RDS(on) while preserving FOM
  • Low output charge
  • Ultra-low reverse recovery charge
  • Commutation ruggedness
  • High-switching frequency

Products

About

Available in a wide range of packages to meet your design requirements

 Infineon’s OptiMOS™ 5 150 V power MOSFETs are available in SuperSO8, TO-220, TOLL, TOLG, TOLT, D²PAK, D²PAK-7, PQFN 3.3x3.3 mm packages. The family of MOSFETs demonstrate not only lower output charge and higher switching frequency, but also ultra-low reverse recovery charge (Qrr). Consequently, the need for paralleling is reduced and end products are made more rugged, leading to overall system cost reduction.

Improved body diode with reduced Qrr

The behavior of the body diode was substantially improved by the drastically reduced reverse recovery charge (Qrr), with the corresponding positive effects on the EMC behavior and the efficiency. The OptiMOS™ 5 150 V MOSFET family can thus lead to a reduction in development time and costs. In addition, the OptiMOS™ 5 150 V enables easier thermal management with reduced stress on the components.

Benefits of low RDS(on) in an application

Benefits in the application due to low RDS(on) are:

  • Considering the same package, the ON losses can be reduced by up to 25 percent compared to the next best alternative
  • Depending on the application, it is now possible to use a smaller package (e.g., SuperSO8 instead of a D²PAK)
  • Where appropriate, it is possible to eliminate a through-hole device (THD), such as the TO-220; instead SMD packages such as the D²PAK or even SuperSO8 can be used
  • MOSFETs often have to be connected in parallel to reduce the resulting drain-source ON resistance. The OptiMOS™ 5 150 V makes it possible to either reduce the amount of paralleled MOSFETs or entirely avoid the parallel connection. The OptiMOS™ 5 150 V, therefore, may result in less required space and a better cost position
  • Compared to its predecessor OptiMOS™ 3, the OptiMOS™ 5 has a smaller chip, with its corresponding cost benefits, while the RDS(on) is unchanged

Available in a wide range of packages to meet your design requirements

 Infineon’s OptiMOS™ 5 150 V power MOSFETs are available in SuperSO8, TO-220, TOLL, TOLG, TOLT, D²PAK, D²PAK-7, PQFN 3.3x3.3 mm packages. The family of MOSFETs demonstrate not only lower output charge and higher switching frequency, but also ultra-low reverse recovery charge (Qrr). Consequently, the need for paralleling is reduced and end products are made more rugged, leading to overall system cost reduction.

Improved body diode with reduced Qrr

The behavior of the body diode was substantially improved by the drastically reduced reverse recovery charge (Qrr), with the corresponding positive effects on the EMC behavior and the efficiency. The OptiMOS™ 5 150 V MOSFET family can thus lead to a reduction in development time and costs. In addition, the OptiMOS™ 5 150 V enables easier thermal management with reduced stress on the components.

Benefits of low RDS(on) in an application

Benefits in the application due to low RDS(on) are:

  • Considering the same package, the ON losses can be reduced by up to 25 percent compared to the next best alternative
  • Depending on the application, it is now possible to use a smaller package (e.g., SuperSO8 instead of a D²PAK)
  • Where appropriate, it is possible to eliminate a through-hole device (THD), such as the TO-220; instead SMD packages such as the D²PAK or even SuperSO8 can be used
  • MOSFETs often have to be connected in parallel to reduce the resulting drain-source ON resistance. The OptiMOS™ 5 150 V makes it possible to either reduce the amount of paralleled MOSFETs or entirely avoid the parallel connection. The OptiMOS™ 5 150 V, therefore, may result in less required space and a better cost position
  • Compared to its predecessor OptiMOS™ 3, the OptiMOS™ 5 has a smaller chip, with its corresponding cost benefits, while the RDS(on) is unchanged

Documents

Documents

Design resources

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community ", "labelEn" : "Ask the community " }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions ", "labelEn" : "View all discussions " } ] }