GaN transistors (GaN HEMTs)

CoolGaN™ Transistors - highly efficient normally-off devices ranging from 60 V up to 700 V.

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Overview

Infineon's gallium nitride power transistors are driving digitalization and decarbonization, while enabling high-frequency operation, increasing efficiency and reducing system size in consumer and industrial applications. They are available in voltage classes from 60 V to 700 V and in a broad variety of packages.

Key Features

  • 60 V - 700 V GaN transistors
  • Top and bottom side cooled packages
  • Ultrafast switching-speed
  • Superior FOMs
  • Continous current: 4 A - 100 A
  • RDS(on)typ. from 1.4 mΩ to 450 mΩ
  • Enhancement mode (e-mode)
  • No reverse-recovery charge
  • Ultra-low gate and output charge

Products

About

Benefits of Infineon´s GaN transistors

With their superior switching speed, GaN transistors enable high power density, reduce energy losses, and increase efficiency in a wide range of applications. This means that designers can create smaller, lighter, and more compact systems delivering high performance. 

Compared to traditional Si switches, GaN transistors have higher thermal conductivity, allowing for better heat dissipation and improved reliability. CoolGaN™ Transistors are designed to be robust, withstanding high voltage spikes and ensuring a longer lifespan. 

Gate driver ICs for GaN

The right gate driver IC is inevitable, as it can help designers to achieve the best performance while minimizing costs. Our broad portfolio comprises single- and dual-channel isolated and non-isolated gate drivers tailor-made for GaN. Therein, also a family of single-channel non-isolated devices with truly differential inputs, namely, the EiceDRIVER™ 1EDN TDI family. 

Check out our EiceDRIVER™ portfolio, and learn about the gate driver ICs fitting your GaN designs.

Gate driver ICs for GaN
GaN packaging

The portfolio in the 60 V to 200 V range housed in the PQFN 3x3 and PQFN 3x5 packages has a moisture sensitivity level (MSL) rating of 1, which makes them suitable for standard storage and handling conditions.

In the high-voltage arena (≥600 V), we offer a very broad variety of SMD packages, ranging from TOLL, TOLT, ThinPAK 5x6, DFN 8x8, to top- and bottom-side cooled DSO. These packages cater to diverse design requirements and offer a perfect blend of compact size, improved thermal performance, cost-effectiveness, and design flexibility.

Did you know?

Did you know that terms like GaN fets, GaN MOSFETs, GaN transistors and GaN HEMTs are all interchangeable terms with slight technical variations for our CoolGaN™ Transistors? 

Interested in our CoolGaN™ solutions?

Infineon’s discrete and integrated GaN solutions deliver highest efficiency and power density in consumer, industrial, and automotive applications. If you are interested in our CoolGaN™ products and solutions, don’t hesitate to contact our GaN experts.

Get in touch with us

Benefits of Infineon´s GaN transistors

With their superior switching speed, GaN transistors enable high power density, reduce energy losses, and increase efficiency in a wide range of applications. This means that designers can create smaller, lighter, and more compact systems delivering high performance. 

Compared to traditional Si switches, GaN transistors have higher thermal conductivity, allowing for better heat dissipation and improved reliability. CoolGaN™ Transistors are designed to be robust, withstanding high voltage spikes and ensuring a longer lifespan. 

Gate driver ICs for GaN

The right gate driver IC is inevitable, as it can help designers to achieve the best performance while minimizing costs. Our broad portfolio comprises single- and dual-channel isolated and non-isolated gate drivers tailor-made for GaN. Therein, also a family of single-channel non-isolated devices with truly differential inputs, namely, the EiceDRIVER™ 1EDN TDI family. 

Check out our EiceDRIVER™ portfolio, and learn about the gate driver ICs fitting your GaN designs.

Gate driver ICs for GaN

GaN packaging

The portfolio in the 60 V to 200 V range housed in the PQFN 3x3 and PQFN 3x5 packages has a moisture sensitivity level (MSL) rating of 1, which makes them suitable for standard storage and handling conditions.

In the high-voltage arena (≥600 V), we offer a very broad variety of SMD packages, ranging from TOLL, TOLT, ThinPAK 5x6, DFN 8x8, to top- and bottom-side cooled DSO. These packages cater to diverse design requirements and offer a perfect blend of compact size, improved thermal performance, cost-effectiveness, and design flexibility.

Did you know?

Did you know that terms like GaN fets, GaN MOSFETs, GaN transistors and GaN HEMTs are all interchangeable terms with slight technical variations for our CoolGaN™ Transistors? 

Interested in our CoolGaN™ solutions?

Infineon’s discrete and integrated GaN solutions deliver highest efficiency and power density in consumer, industrial, and automotive applications. If you are interested in our CoolGaN™ products and solutions, don’t hesitate to contact our GaN experts.

Get in touch with us

Documents

Documents

Design resources

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community ", "labelEn" : "Ask the community " }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions ", "labelEn" : "View all discussions " } ] }