Overview

Our gate driver IC solutions are the expert’s choice. We offer half-bridge gate drivers with two interlocked channels. Now including the new 650 V half-bridge Silicon on Insulator (SOI) gate driver ICs with high current (2.5 A) and low current (0.7 A) options. With excellent ruggedness and noise immunity, these gate drivers are perfect for e.g., motor drives and high-power lighting. We also offer automotive qualified half-bridge gate driver ICs.

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About

Introduction to EiceDRIVER™ gate driver ICs

Decades of application expertise and technology development at both Infineon and International Rectifier have produced a portfolio of gate driver ICs for use with silicon and wide-bandgap power devices, such as MOSFETs, discrete IGBTs, IGBT modules, SiC MOSFETs, and GaN HEMTs. We offer excellent product families of galvanic isolated gate drivers, automotive qualified gate drivers, <200 V, 500-650 V, and 1200 V level shift gate drivers.

Infineon EiceDRIVER(TM) gate driver IC portfolio spans a variety of configurations, voltage classes, isolation levels, protection features, and package options. State-of-the-art discrete switch families require tuning of gate drive circuits to take full advantage of their capacity and capabilities. An optimum gate driver configuration is essential for all power switches, whether they are in discrete form or in a power module.

EiceDRIVER ™ level-shift silicon on insulator (SOI) technology

Our silicon-on-insulator (SOI) technology is a high-voltage, level-shift technology providing unique and best-in-class advantages, including integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes. Each transistor is isolated by buried silicon dioxide, which eliminates the parasitic bipolar transistors that causing latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.

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EiceDRIVER ™ level-shift junction isolation (JI) technology

The p-n junction-isolation (JI) technology is a mature, proven industry-standard MOS/CMOS fabrication technique. Our proprietary high-voltage integrated circuit (HVIC) and latch-immune CMOS technologies enable rugged monolithic construction. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with the best price per performance. 

Learn more

Introduction to EiceDRIVER™ gate driver ICs

Decades of application expertise and technology development at both Infineon and International Rectifier have produced a portfolio of gate driver ICs for use with silicon and wide-bandgap power devices, such as MOSFETs, discrete IGBTs, IGBT modules, SiC MOSFETs, and GaN HEMTs. We offer excellent product families of galvanic isolated gate drivers, automotive qualified gate drivers, <200 V, 500-650 V, and 1200 V level shift gate drivers.

Infineon EiceDRIVER(TM) gate driver IC portfolio spans a variety of configurations, voltage classes, isolation levels, protection features, and package options. State-of-the-art discrete switch families require tuning of gate drive circuits to take full advantage of their capacity and capabilities. An optimum gate driver configuration is essential for all power switches, whether they are in discrete form or in a power module.

EiceDRIVER ™ level-shift silicon on insulator (SOI) technology

Our silicon-on-insulator (SOI) technology is a high-voltage, level-shift technology providing unique and best-in-class advantages, including integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes. Each transistor is isolated by buried silicon dioxide, which eliminates the parasitic bipolar transistors that causing latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.

Learn more

EiceDRIVER ™ level-shift junction isolation (JI) technology

The p-n junction-isolation (JI) technology is a mature, proven industry-standard MOS/CMOS fabrication technique. Our proprietary high-voltage integrated circuit (HVIC) and latch-immune CMOS technologies enable rugged monolithic construction. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with the best price per performance. 

Learn more

Documents

Documents

News & highlights

EiceDRIVER™ 2EDL Driver IC Family

EiceDRIVER™ 2EDL 600 V half bridge gate driver IC family basing on level-shifter SOI (Silicon on Insulator) technology integrates low-ohmic ultrafast bootstrap diode and supports higher efficiency and smaller form factors.

Galvanic isolated Gate Drivers with advanced Protection Features

XDPS2201 is a multi-mode, digitally configurable hybrid flyback controller that combines the simplicity of a traditional flyback topology with the performance of a resonant converter.

Gate Driver Solutions - Why Infineon is the best Partner

This training provides an insight about the system benefits of wide-bandgap devices, which will conquer market share in areas where power density, efficiency and/or battery range are decisive. The training focuses on two applications, mobile chargers and on-board chargers, and will talk about the challenges faced by the solutions today and how SiC and GaN provide next levels of performance.

Advantages of Infineon SOI Gate Driver Technology

1200 V Silicon-On-Insulators level-shift gate drivers from the market leader. This video demonstrates the advantages of products with Infineon SOI. E.g. Integrated bootstrap diode, Low level-shift losses - saving space and cost.