Overview

We offer three-phase, half-bridge, high- and low-side gate driver ICs tailored for 1200 V industrial drives, commercial air conditioning, or general-purpose motor control and inverters applications.

Key features
  • Low quiescent current
  • Various input options
  • Standard pin-out and packages
  • Cross-conduction prevention logic
Applications
Motor Control
Residential air conditioning

Products

About

EiceDRIVER™ 1200 V level shift gate driver IC Overview

We offers an industry-leading portfolio of level shift gate driver ICs for 1200 V applications requiring functional isolation. 

These drivers are available in various three-phase, half-bridge, or high- and low-side configurations with protection features such as overcurrent protection (OCP), de-saturation (DESAT), undervoltage lockout (UVLO), cross-conduction prevention logic, satus indicators like fault, enable, and shutdown. Status indication (Fault), enable, and shutdown control signals are also available. 

1200 V gate drivers are available with Infineon's level-shift junction isolation technology or Infineon’s unique silicon-on-insulator (SOI) technology.

EiceDRIVER ™ gate driver IC applications

1200 V level-shift gate driver ICs drive 1200 V TRECHSTOP™ IGBTs , 1200 V CoolSiC™ MOSFETs, and 1200 V EconoPIM™ and EasyPACK™ modules in varios power electonic applications such as genearl-purpose drives, pumps, heat pumps, fans, commerical and residential air conditioners up to 12 kW.

EiceDRIVER ™ level-shift silicon on insulator (SOI) technology

Our silicon-on-insulator (SOI) technology is a high-voltage, level-shift technology providing unique and best-in-class advantages, including integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes. Each transistor is isolated by buried silicon dioxide, which eliminates the parasitic bipolar transistors that causing latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.

Learn more
EiceDRIVER™ 1200 V level shift gate driver ICs

The p-n junction-isolation (JI) technology is a mature, proven industry-standard MOS/CMOS fabrication technique. Our proprietary high-voltage integrated circuit (HVIC) and latch-immune CMOS technologies enable rugged monolithic construction. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with the best price per performance. 

Learn more

EiceDRIVER™ 1200 V level shift gate driver IC Overview

We offers an industry-leading portfolio of level shift gate driver ICs for 1200 V applications requiring functional isolation. 

These drivers are available in various three-phase, half-bridge, or high- and low-side configurations with protection features such as overcurrent protection (OCP), de-saturation (DESAT), undervoltage lockout (UVLO), cross-conduction prevention logic, satus indicators like fault, enable, and shutdown. Status indication (Fault), enable, and shutdown control signals are also available. 

1200 V gate drivers are available with Infineon's level-shift junction isolation technology or Infineon’s unique silicon-on-insulator (SOI) technology.

EiceDRIVER ™ gate driver IC applications

1200 V level-shift gate driver ICs drive 1200 V TRECHSTOP™ IGBTs , 1200 V CoolSiC™ MOSFETs, and 1200 V EconoPIM™ and EasyPACK™ modules in varios power electonic applications such as genearl-purpose drives, pumps, heat pumps, fans, commerical and residential air conditioners up to 12 kW.

EiceDRIVER ™ level-shift silicon on insulator (SOI) technology

Our silicon-on-insulator (SOI) technology is a high-voltage, level-shift technology providing unique and best-in-class advantages, including integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes. Each transistor is isolated by buried silicon dioxide, which eliminates the parasitic bipolar transistors that causing latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.

Learn more

EiceDRIVER™ 1200 V level shift gate driver ICs

The p-n junction-isolation (JI) technology is a mature, proven industry-standard MOS/CMOS fabrication technique. Our proprietary high-voltage integrated circuit (HVIC) and latch-immune CMOS technologies enable rugged monolithic construction. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with the best price per performance. 

Learn more

Documents

Documents

News & highlights

Advantages of Infineon SOI Gate Driver Technology

1200 V Silicon-On-Insulators level-shift gate drivers from the market leader. This video demonstrates the advantages of products with Infineon SOI. E.g. Integrated bootstrap diode, Low level-shift losses - saving space and cost.

An Introduction to Infineon Gate Drivers

What is a gate driver? Why use a gate driver? How to use a gate driver? Watch our introduction video and become a gate driver expert.