Active and preferred

JANSR2N7660T3

Data Sheet
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JANSR2N7660T3
JANSR2N7660T3
Data Sheet

Product details

  • Die Size
    3
  • ESD Class
    2
  • Generation
    R9
  • ID (@25°C) max
    -23 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    Low-Ohmic TO-257AA
  • Polarity
    P
  • QG
    50 C
  • QPL Part Number
    2N7660T3
  • Qualification
    DLA
  • RDS (on) (@25°C) max
    76 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    -100 V
  • VF max
    -1.3 V
Recommended
OPN
Product Status active and preferred
Infineon Package
M-TO257-3
Package Name TO-257AA LOW OHMIC
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
M-TO257-3
Package Name TO-257AA LOW OHMIC
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
JANSR2N7660T3 is a rad hard, single P-channel MOSFET in a TO-257AA Tabless low ohmic package. With -100V and -23A capabilities, this R9 generation device has up to 100krad(Si) TID and QPL classification. Its low RDS(on) and fast switching times makes it perfect for high-speed switching applications in motor controllers and DC-DC converters in space bus and payload systems.

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