Active and preferred

IRHY67C30C

Data Sheet
package

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

IRHY67C30C
IRHY67C30C
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • ESD Class
    Class 2
  • Generation
    R6
  • ID (@100°C) max
    2.1 A
  • ID (@25°C) max
    3.4 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    TO-257AA
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    52 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    3000 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    600 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
Recommended
OPN
Product Status active and preferred
Infineon Package
M-TO257-3
Package Name N/A
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
M-TO257-3
Package Name -
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
The IRHY67C30C R5 P-channel MOSFET is rad hard with a -200V and -8A capacity. Housed in a TO-257AA package, the electrical performance is up to 100krad(Si) TID, with QIRL classification. The device has low RDS(on) and gate charge for reduced power losses in switching applications, retaining MOSFET advantages such as voltage control, fast switching, and temperature stability.

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }