IRHMB6S7260

Data Sheet

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IRHMB6S7260
IRHMB6S7260
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 3A
  • Generation
    R6
  • ID (@100°C) max
    35 A
  • ID (@25°C) max
    45 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    TO-254AA Tabless Low Ohmic
  • Polarity
    N
  • QG
    240 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    29 mΩ
  • SEE
    100 MeV∙cm2/mg
  • TID max
    100 Krad(Si)
  • VBRDSS
    200 V
  • VF max
    1.2 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHMB6S7260 is rad hard N-channel MOSFET with R6 technology. This single MOSFET has a maximum voltage of 200V and can handle a current of up to 35A. The TO-254AA tabless low ohmic package provides low RDS(on) and low gate charge, reducing power losses in switching applications. With electrical performance up to 100krad(Si) TID classification, this MOSFET is perfect for space applications

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