IRFHM830D

30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package
Data Sheet

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IRFHM830D
IRFHM830D
Data Sheet

Product details

  • ID (@ TA=70°C) max
    16 A
  • ID (@ TA=25°C) max
    20 A
  • ID (@ TC=25°C) max
    40 A
  • ID max
    40 A
  • ID (@ TC=100°C) max
    40 A
  • Moisture Sensitivity Level
    1
  • Mounting
    SMD
  • Package
    PQFN 3.3 x 3.3
  • Polarity
    N
  • Ptot (@ TA=25°C) max
    2.8 W
  • Ptot max
    37 W
  • Qgd
    4.5 nC
  • QG
    13 nC
  • RDS (on) (@10V) max
    4.3 mΩ
  • RDS (on) max
    4.3 mΩ
  • RDS (on) (@4.5V) max
    7.1 mΩ
  • RthJC max
    3.4 K/W
  • Special Features
    Schottky (includes Schottky like and FETky)
  • Tj max
    150 °C
  • VDS max
    30 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Benefits

  • RoHS Compliant
  • Low Thermal Resistance to PCB (less than 3.4°C/W)
  • Low Profile (less than 1.0 mm)
  • Industry-Standard Pinout
  • Compatible with Existing Surface Mount Techniques
  • Schottky intrinsic diode with low forward voltage
  • Qualified Industrial
  • Qualified MSL1

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