not for new design
RoHS Compliant
Lead-free

IKW40N120T2

1200 V, 40 A IGBT discrete with anti-parallel diode in TO-247 package
ea.
in stock

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IKW40N120T2
IKW40N120T2
ea.

Product details

  • Eoff (Hard Switching)
    3.8 mJ
  • Eon
    4.5 mJ
  • IC (@ 25° ) max
    75 A
  • IC (@ 100°) max
    40 A
  • ICpuls max
    160 A
  • IF max
    75 A
  • IFpuls max
    160 A
  • Irrm
    31 A
  • Package
    TO-247-3
  • Ptot max
    480 W
  • QGate
    192 nC
  • Qrr
    3300 nC
  • RGint
    0 Ω
  • RG
    12 Ω
  • Switching Frequency
    2 kHz to 20 kHz
  • td(off)
    405 ns
  • td(on)
    32 ns
  • Technology
    IGBT TRENCHSTOP™ 2
  • tf
    195 ns
  • tr
    28 ns
  • tSC
    10 µs
  • VCE(sat)
    2.3 V
  • VCE max
    1200 V
  • VF
    1.75 V
OPN
IKW40N120T2FKSA1
Product Status not for new design
Infineon Package
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free No
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status not for new design
Infineon Package
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
Hard-switching 1200 V, 40 A TRENCHSTOP™ IGBT4 co-packed with free-wheeling diode in a TO-247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Features

  • Lowest VCEsatdrop
  • Low switching losses
  • Positive temp. coeffi. in VCEsat
  • Easy parallel switching capability
  • Very soft, fast recovery diode
  • High ruggedness
  • Temperature stable behavior
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution

Documents

Design resources

Developer community

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