Active and preferred
RoHS Compliant

IAUCN08S7N019T

80 V, N-Ch, 1.94 mΩ max, Automotive MOSFET, top-side cooled SSO10T (5x7), OptiMOS™ 7
ea.
in stock

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IAUCN08S7N019T
IAUCN08S7N019T
ea.

Product details

  • ID (@25°C) max
    175 A
  • Launch year
    2025
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    PG-LHDSO-10
  • Planned to be available until at least
    2040
  • Polarity
    N
  • QG (typ @10V)
    68 nC
  • Qualification
    Automotive
  • RDS (on) (@10V) max
    1.94 mΩ
  • Technology
    OptiMOS™-7
  • VDS max
    80 V
  • VGS(th)
    2.8 V
OPN
IAUCN08S7N019TATMA1
Product Status active and preferred
Infineon Package
Package Name SSO10T
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name SSO10T
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
IAUCN08S7N019T is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 80V. This product is offered in our innovative, top-side cooled SSO10T 5x7 mm2 SMD package. The SSO10T package helps customers achieve big advancements in cooling and power density. It is designed specifically for the high performance, quality, and robustness needed for demanding automotive applications.

Features

  • Direct cooling path to ECU housing
  • Virtually no heat flows into PCB
  • Industry’s largest exposed pad area
  • Freedom to route traces under package
  • Can mount parts on back side of PCB
  • Leading edge on-resistance, RDS(on)
  • Fast switching times (turn on/off)
  • Tight threshold voltage, VGS(th), range
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • Package is listed with JEDEC

Benefits

  • Enables excellent thermal management
  • Thermal impedance improved 20% to 50%
  • Thermal resistance improved 20% to 50%
  • Helps reduce ECU volume or PCB area
  • Helps reduce PCB cost (area, Cu, vias)
  • Reduces PCB and system design effort
  • Helps achieve highest power density
  • Reduces conduction losses
  • Superior switching performance
  • Well-suited for parallel placement
  • Quality and robustness for automotive
  • Potential for second source supplier

Applications

Documents

Design resources

Developer community

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