not for new design
RoHS Compliant

IAUC45N04S6N070H

40 V, N-Ch, 7.0 mΩ max, Automotive MOSFET, Dual SSO8 HB (5x6), OptiMOS™ 6
ea.
in stock

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IAUC45N04S6N070H
IAUC45N04S6N070H
ea.

Product details

  • ID (@25°C) max
    45 A
  • Launch year
    2020
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    PG-TDSON-8
  • Currently planned availability until at least
    2029
  • Polarity
    N+N
  • QG (typ @10V)
    9 nC
  • QG (typ @10V) max
    12 nC
  • Qualification
    Automotive
  • RDS (on) (@10V) max
    7 mΩ
  • Technology
    OptiMOS™-6
  • VDS max
    40 V
  • VGS(th)
    2.6 V
OPN
IAUC45N04S6N070HATMA1
Product Status not for new design
Infineon Package
Package Name Dual SSO8 HB
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status not for new design
Infineon Package
Package Name Dual SSO8 HB
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The dual SSO8 5x6 mm² package is perfect for single loads. For bridge applications, routing with a dual MOSFET is complex and may require a larger PCB area, with its current ratings limited to 20A. The integrated half-bridge reduces PCB area by providing enhanced routing for bridge applications. It is designed based on optimized OptiMOS™6 technology, offering a wide RDS(ON) range from 3.0 mΩ to 7.0 mΩ and an increased current rating of 60A.

Features

  • Integrated half-bridge SSO8 (5x6)
  • 5x6 mm² reduced footprint
  • Optimized layout for B6 apps
  • Optimized switching & power losses
  • Package JEDEC listed
  • Cost efficiency for low & mid power drive
  • Cu-clip soldered
  • PPAP Capable Device

Benefits

  • Enhanced routing for bridge applications results
  • Optimized for OptiMOS™6
  • RDS(ON) range 3.0 mΩ - 7.0 mΩ
  • Increased DS current rating of 60A

Documents

Design resources

Developer community

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