Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
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END OF LIFE
discontinued
RoHS Compliant

AUIRFS4010

END OF LIFE
100 V, N-Ch, 4.7 mΩ max, Automotive MOSFET, D2PAK, Gen 10.7

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Product details

  • ID (@25°C) max
    180 A
  • Moisture Sensitivity Level
    1
  • Mounting
    SMD
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    D2PAK D2PAK
  • Polarity
    N
  • Ptot max
    375 W
  • Qgd
    50 nC
  • QG (typ @10V)
    143 nC
  • Qualification
    Automotive
  • RDS (on) (@10V) max
    4.7 mΩ
  • RthJC max
    0.4 K/W
  • Technology
    Gen 10.7
  • Tj max
    175 °C
  • VDS max
    100 V
  • VGS(th) max
    4 V
  • VGS(th) min
    2 V
  • VGS max
    20 V
OPN
AUIRFS4010TRL
Product Status discontinued
Infineon Package
Package Name D2PAK
Packing Size 800
Packing Type TAPE & REEL LEFT
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status discontinued
Infineon Package
Package Name D2PAK
Packing Size 800
Packing Type TAPE & REEL LEFT
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Designed for automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features include 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These attributes make it an efficient and reliable choice for automotive and various other applications.

Features

  • Advanced Process Technology
  • Ultra Low On-Resistance
  • 175°C operating temperature
  • Fast Switching
  • Repetitive Avalanche Allowed up to Tjmax
  • Lead-Free, RoHS Compliant
  • Automotive Qualified
  • PPAP Capable Device

Applications

Documents

Design resources

Developer community

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