not for new design
RoHS Compliant
Lead-free

AIMW120R080M1

The CoolSiC™ MOSFETs for Automotive family has been developed for current & future On-Board Charger & DC-DC applications in hybrid & electric vehicles
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in stock

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AIMW120R080M1
AIMW120R080M1
ea.

Product details

  • ID (@25°C) max
    33 A
  • Launch year
    2021
  • Operating Temperature
    -55 °C to 175 °C
  • Planned to be available until at least
    2033
  • Polarity
    N
  • Qualification
    Automotive
  • RDS (on) (@ Tj = 25°C)
    80 mΩ
  • Technology
    CoolSiC™ G1
  • VDS max
    1200 V
OPN
AIMW120R080M1XKSA1
Product Status not for new design
Infineon Package
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status not for new design
Infineon Package
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The AIMW120R080M1 meets automotive industry's high reliability, quality & performance demands. CoolSiC™ MOSFETs enable higher switching frequency, reducing magnetic component volume by 25% & cutting costs. It meets new EV efficiency standards, ensuring a very long, safe lifetime. Additional features: low gate charge & capacitance, no reverse recovery losses, low switching losses & threshold-free on-state characteristics for an easy design-in.

Features

  • semiconductor material - Silicon Carbide
  • Very low switching losses
  • Threshold-free on state characteristic
  • IGBT-compatible driving voltage
  • 0 V turn-off gate voltage
  • Gate Threshold VGS(th)=4.5V
  • Robust body diode for synchronous
  • Temp independent turn-off switching loss

Benefits

  • Efficiency improvement
  • Enabling higher frequency
  • Increased power density
  • Cooling effort reduction
  • Reduction of system complexity and cost

Documents

Design resources

Developer community

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