2ED020I06-FI

650 V half-bridge gate driver IC with galvanic isolation, shutdown
Data Sheet

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2ED020I06-FI
2ED020I06-FI
Data Sheet

Product details

  • Channels
    2
  • Configuration
    Half Bridge
  • Input Vcc
    14 V to 18 V
  • Isolation Type
    Galvanic isolation - Functional
  • Output Current (Sink)
    2.5 A
  • Output Current (Source)
    1.5 A
  • Qualification
    Industrial
  • Turn Off Propagation Delay
    85 ns
  • Turn On Propagation Delay
    85 ns
  • VBS UVLO (Off)
    11.2 V
  • VBS UVLO (On)
    12.2 V
  • VCC UVLO (Off)
    11 V
  • VCC UVLO (On)
    12 V
  • Voltage Class
    650 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
EiceDRIVER™ Enhanced - High voltage, high speed power MOSFET and IGBT half-bridge driver IC with coreless transformer technology and interlocking high and low side referenced outputs.

Features

  • 650 V Coreless Transformer Driver
  • Rail-to-rail outputs
  • Protection function
  • Floating high side driver
  • Undervol. lockout for both channels
  • 3.3 V and 5 V TTL compatible inputs

Applications

Diagrams

Circuit_diagram_2ED020I06-FI
Circuit_diagram_2ED020I06-FI
Circuit_diagram_2ED020I06-FI Circuit_diagram_2ED020I06-FI Circuit_diagram_2ED020I06-FI
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