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1EDI20N12AF

1200 V, 4 A single-channel gate driver with separate output and short circuit clamping
Data Sheet
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board
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1EDI20N12AF
1EDI20N12AF
ea.
Data Sheet

Product details

  • Channels
    1
  • Configuration
    High-side
  • Input Vcc
    3.1 V to 17 V
  • Iq1 max
    1 mA
  • Iq2 max
    2 mA
  • Isolation Type
    Galvanic isolation - Functional
  • Output Current (Sink)
    3.5 A
  • Output Current (Source)
    4 A
  • PDout
    400 mW
  • Qualification
    Industrial
  • RDSON_H(max)
    4.3 Ω
  • RDSON_H(typ)
    2.25 Ω
  • RDSON_L (max)
    5 Ω
  • RDSON_L(typ)
    2.25 Ω
  • RthJA
    165 K/W
  • Turn Off Propagation Delay
    120 ns
  • Turn On Propagation Delay
    115 ns
  • VBS UVLO (Off)
    8.5 V
  • VBS UVLO (On)
    9.1 V
  • VCC UVLO (On)
    2.85 V
  • VCC UVLO (Off)
    2.75 V
  • Voltage Class
    1200 V
Recommended
OPN
1EDI20N12AFXUMA1
Product Status active
Infineon Package
PG-DSO-8
Package Name N/A
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-DSO-8
Package Name -
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The 1EDI20N12AF is a 1200V single-channel isolated gate driver with 3.5/4A typical sinking and sourcing peak output current in a DSO-8 narrow package. It belongs to the EiceDRIVER™ 1ED Compact 150mil family (1ED-AF family), offering separate sink and source output, 40ns input filter, and accurate stable timing. It can operate over a wide supply voltage range, either unipolar or bipolar.

Features

  • Compact single channel isolated
  • For 600 V, 650 V, 950 V MOSFETs
  • Galvanically isolated
  • 4 A typ. sink & source output
  • 40 V max. output supply voltage
  • 120 ns propagation delay with 40 ns input filter
  • Wth 40 ns input filter
  • High CMTI >100 kV/μs
  • Separate source and sink outputs
  • Short-circuit clamping
  • Active shutdown
  • DSO-8 150 mil narrow-body package

Benefits

  • Tailored for all 650 V CoolMOS™ C7, P6 and other super junction MOS transistors
  • High switching frequency applications as SMPS, up to 4 MHz
  • Integrated filters reduce the need of external filters
  • Suitable for operation at high ambient temperature and in fast switching applications
  • No need to adapt signal voltage levels between μController and driver
  • Active shutdown to ensure a safe IGBT off-state in case the output chip is not connected to the power
  • Short-circuit clamping to limit the gate voltage during short circuit

Diagrams

Block_1EDIxxN12AF
Block_1EDIxxN12AF
Block_1EDIxxN12AF Block_1EDIxxN12AF Block_1EDIxxN12AF
1EDIxxN12AF 1EDIxxN12AF 1EDIxxN12AF
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