Setting the new industry standard for high density design. Please contact your account manager to learn more about OptiMOS™ 6 power MOSFET 80 V.
OptiMOS™ 6 power MOSFET 80 V
OptiMOS™ 6 80 V - the latest power MOSFET technology setting the new industry standard for high power density designs
OptiMOS™ 6 80 V - the latest power MOSFET technology setting the new industry benchmark performance with a wide portfolio offering including PQFN 3.3x3.3 with RDS(on) max ranges from 5.3 mΩ to 15.7 mΩ, and PQFN 5x6 (SuperSO8) with RDS(on) max ranges from 1.45 mΩ to 15.1 mΩ.
Compared to the latest OptiMOS™ 5 technology, Infineon's leading thin wafer technology enables significant performance improvement, including >24% lower RDS(on) and ~40% improved FOM Qg x RDS(on) and FOM Qgd x RDS(on) in SuperSO8, and >28% lower RDS(on) and ~40% improved FOMs in PQFN 3.3x3.3. The performance improvement enables easier thermal design and less paralleling, leading to higher system efficiency, higher power density and system cost reduction.
Infineon’s OptiMOS™ 6 80 V family is ideal for high switching frequency applications such as telecom, server and solar, and thanks to the performance improvement OptiMOS™ 6 80 V can be used also in battery powered applications as well as in battery management systems (BMS).
Key features:
Benchmark performances
>24% lower RDS(on) and ~40% improved FOMs compared to OptiMOS™ 5 best-in-class in SuperSO8
>28% lower RDS(on) and ~40% improved FOMs compared to OptiMOS™ 5 best-in-class in PQFN 3.3x3.3
Industry standard package portfolio with RDS(on) option for best cost/performance selection
Normal level gate drive offers immunity to false turn-on in noisy environments
175°C rated for improved power, SOA, and avalanche current ratings versus 150°C rated devices
Infineon’s industrial qualification for benchmark reliability
Key benefits:
Lower conduction losses than equivalent OptiMOS™ 5
Lower switching losses than equivalent OptiMOS™ 5
Robust reliable performance
Wide portfolio offering for supply chain flexibility
