OptiMOS™ 5 150V

The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R_DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q_rr without compromising FOM_gd and FOM_OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (lowest Q_rr in SuperSO8 = 26 nC) increases commutation ruggedness. 

 The OptiMOS™ 5 150 V technology enables smaller best-in-class SuperSO8 (PQFN 5x6) package devices to replace TO-220 alternatives. The switch provides increased power density and lower voltage overshoot (V_DS) due to reduced package inductance. 

 Available in six packages, Infineon’s OptiMOS™ 5 150 V power MOSFETs demonstrate not only lower output charge and higher switching frequency, but also ultra-low reverse recovery charge (Q_rr). Consequently, the need for paralleling is reduced and end products are made more rugged, leading to overall system cost reduction.