IAUS300N08S5N011 80V, N-Ch, 1.1 mΩ max, Automotive MOSFET, TOLG, OptiMOS™-5
Overview
The IAUS300N08S5N011 is a 1.1mR 80V MOSFET in a TOLG package with gullwings, using Infineon’s leading OptiMOS™-5 technology.
Next to others it is used in 48V Main Inverter / Starter Generators, DCDC Converter as well as 48V Battery Main Switches.
Summary of Features
- OptiMOSTM 5 – power MOSFET for automotive applications
- N-channel - Enhancement mode
- AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (RoHS compliant)
- Ultra low Rds(on)
- 100% Avalanche tested
Training
- OptiMOS™ 7 40 volts is Infineon’s new automotive MOSFET technology.
- It presents a 25 percent Ron improvement when compared to the previous OptiMOS™ 6.
- Be familiar with Infineon’s measures to reduce the failure rate and to prove the quality level of a product
- Identify the right product based on given target application requirements
- Get to know today`s fast growing automotive MOSFET market.
- Know more about Infineon`s wide MOSFET selection for 48 V mild-hybrid electric vehicle, or MHEV, applications.
- Learn how Infineon defines a true culture of quality.
- Get to know Infineon`s Zero Defect approach and how Infineon goes beyond the requiriments when it comes to automotive MOSFET qulification.
- Get to know Infineon’s Automotive MOSFET data sheet.
- Improve your understanding of the parameters and diagrams in the document, which will help you better evaluate the device’s limits and capabilities.
- Be familiar with top-side cooling.
- Learn how you can get the most out of your TOLT package.
- Know the different 48 V applications for the new drivetrain architectures.
- Get an overview of Infineon`s comprehensive MOSFET portfolio.
- Have an overview of the converters needed in electric vehicles.
- Analyze the 2-quadrant converter topology in buck and boost mode and the half-bridge converter with center tap rectification topology.
- Recognize the different types of setups in the data sheets.
- Be able to calculate the junction-to-ambient thermal resistance value, the power losses, and the static DC current.
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