IHV 6500V

Overview

6.5 kV IGBT modules in IHV housing

IGBT modules with 6.5 kV trench plus Field stop IGBT and Field stop diode chips precisely developed with the focus on traction application demanding high current capability and optimized switching losses.

With introduction of the IHV housing, we established a standard for high power IGBT modules which was adopted by all well-known manufacturers and used in countless applications all over the world. Under permanent load in daily demanding use of transportation applications or in rough environments like industrial inverters and in wind turbines, the IHV modules convince with their high reliability and robustness.

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Highlights


Especially traction applications operating under harsh conditions require high isolation capability and corresponding creepage and clearance distances which can be found in the 6.5 kV modules.

Features: Benefits:
  • 6.5 kV trench plus Field stop IGBT and Field stop diode chips precisely developed with the focus on traction application demanding high current capability and optimized switching losses
  • Current range from 250 A up to 750 A
  • High reliability and robust module construction
  • AlSiC base plate for highest reliability and high power cycling capability
  • Minimum storage temperature -55°C and minimum operating temperature -50°C
  • Allows energy efficient operation
  • 25% higher current density in the high voltage package IHV standardized by Infineon
  • High power density for compact converter design

 

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Power Conversion

Infineon provides a comprehensive portfolio of high-power products for Power Conversion, to help its customers to achieve their aims.

Advanced Transmission & Distribution

Thyristors have dominated this application for many decades. Nowadays thyristors as well as IGBTs are used in HVDC systems and FACTS to fulfill different needs.

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