Isolated Gate Driver ICs Robust, strong and precise single- and dual-channel, isolated gate driver ICs
EiceDRIVER™ isolated gate drivers are designed for applications that require high performance and state of the art robustness, for example, solar inverter, EV charger, industrial drives, automotive, ESS, UPS, server and telecom SMPS.
The isolated gate drivers offer up to 18 A output current, short propagation delay and delay matching (7 ns), 300 kV/μs CMTI, and wide range of gate voltage (40 V) to enable bipolar power supply with negative gate voltage. Perfect for state-of-the-art SiC MOSFET and GaN switches.
The EiceDRIVER™ Compact and Enhanced families are some of the most notable isolated driver families. EiceDRIVER™ Compact are easy-to-design simple isolated gate drivers with 2-level slew-rate-control and Miller clamp functions in small package like DSO-8. EiceDRIVER™ Enhanced offers advanced features, such as short circuit protection (DESAT) and soft-off, Miller clamp, and I2C-configurability of multiple parameters for rapid prototyping and conditional monitoring, enabling predictive maintenance.
EiceDRIVER™ isolated gate drivers are based on magnetically-coupled coreless transformer (CT) technology, which provide signal transfer across the galvanic isolation. Thanks to the CT technology, we offer function, basic, and reinforce isolation, with UL 1577 (VISO = 5.7 kV) and VDE 0884-11 (VIORM = 1767 V) certification. The functional isolation reaches up to 2300 V, which is suitable for the 2kV CoolSiC™ in 1500 V DC application.
Advanced Protection
- Reliable short-circuit detection via accurate desaturation (DESAT) detection circuits (current source and comparator) protects the power switches from damage during short-circuit condition
- Soft-off for short-circuit current protection to lower collector-emitter voltage overshoot
- Built in short-circuit clamping limits the gate voltage during short circuit
- Active Miller clamp protects against parasitic turn-on due to high dV/dt
| Key Features | Main Benefits |
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Certificates
| Part Numbers | UL 1577 (Vrms) | VED0884-11 Reinforced |
EN 60950-1* |
EN 62368-1 | EN 61010-1 | GB4943.1 | |||||
| 2250 | 2500 | 3000 | 5700 | Basic | Reinforced | Basic | Reinforced | ||||
| 2EDS8165H | √ | √ | √ | √ | √ | ||||||
| 2EDS8265H | √ | √ | √ | √ | √ | ||||||
| 2EDS9265H | |||||||||||
| 2EDF7275F | |||||||||||
| 2EDF7175F | |||||||||||
| 2EDF9275F | |||||||||||
| 2EDF7275K | |||||||||||
| 2EDF7235K | |||||||||||
| 2EDR8259H | √ | √ | √ | √ | |||||||
| 2EDR7259X | √ | √ | √ | √ | |||||||
| 2EDR8259X | √ | √ | √ | √ | |||||||
| 2EDR9259X | √ | √ | √ | √ | |||||||
| 2EDB8259F | √ | ||||||||||
| 2EDB7259Y | √ | ||||||||||
| 2EDB8259Y | √ | ||||||||||
| 2EDB8259Y | √ | ||||||||||
| 2EDB7259K | √ | √ | √ | ||||||||
| 2EDB8259K | √ | √ | √ | ||||||||
| 2EDB7259A | √ | √ | √ | ||||||||
| 2EDB8259A | √ | √ | √ | ||||||||
| Part Number | UL 1577 (Vrms) | VDE0884-11 | |
| 3000 | 5700 | Reinforced | |
| 1ED3120MC12H | √ | √ | |
| 1ED3121MC12H | √ | √ | |
| 1ED3122MC12H | √ | √ | |
| 1ED3123MC12H | √ | √ | |
| 1ED3124MC12H | √ | √ | |
| 1ED3131MC12H | √ | √ | |
| 1ED3431MC12M | √ | √ | |
| 1ED3461MC12M | √ | √ | |
| 1ED3491MC12M | √ | √ | |
| 1ED3830MC12M | √ | √ | |
| 1ED3860MC12M | √ | √ | |
| 1ED3890MC12M | √ | √ | |
| 1ED3120MU12H | √ | ||
| 1ED3121MU12H | √ | ||
| 1ED3122MU12H | √ | ||
| 1ED3123MU12H | √ | ||
| 1ED3124MU12H | √ | ||
| 1ED3131MU12H | √ | ||
| 1ED3431MU12M | √ | ||
| 1ED3461MU12M | √ | ||
| 1ED3491MU12M | √ | ||
| 1ED3830MU12M | √ | ||
| 1ED3860MU12M | √ | ||
| 1ED3890MU12M | √ | ||
| 1ED3124MU12F | √ | ||
| 1ED3125MU12F | √ | ||
| 1ED3240MC12H | √ | √ | |
| 1ED3241MC12H | √ | √ | |
| 1ED3250MC12H | √ | √ | |
| 1ED3251MC12H | √ | √ | |
| 1ED3320MC12N | √ | √ | |
| 1ED3321MC12N | √ | √ | |
| 1ED3322MC12N | √ | √ | |
| 1ED3323MC12N | √ | √ | |
| 1ED3140MU12F | √ | ||
| 1ED3141MU12F | √ | ||
| 1ED3142MU12F | √ | ||
| 1ED3127MU12F | √ | ||
Part Numbers |
UL 1577 (Vrms) | VDE0884-11 Reinforced | ||
| 2500 | 3000 | 5700 | ||
| 1ED020I12FA2 | √ | |||
| 2ED020I12FA | √ | |||
| 1ED020I12FTA | √ | |||
| 1EDI2001AS | √ | |||
| 1EDI2002AS | √ | |||
| 1EDI2010AS | √ | |||
| 1EDI2003AS | √ | |||
| 1EDI2004AS | √ | |||
| 1EDI3020AS | √ | √ (pending) | ||
| 1EDI3021AS | √ | √ (pending) | ||
| 1EDI3023AS | √ | √ (pending) | ||
| 1EDI3030AS | √ | √ (pending) | ||
| 1EDI3031AS | √ | √ (pending) | ||
| 1EDI3033AS | √ | √ (pending) | ||
| 1EDI3050AS | √ | √ (planned) | ||
| 1EDI3051AS | √ | √ (planned) | ||
| 1EDI3025AS | √ | √ (planned) | ||
| 1EDI3035AS | √ | √ (planned) | ||
| 1EDI3040AS | √ | √ (planned) | ||
Select one of our product groups for detailed information
Key takeaways:
- Understand why a reinforced isolation barrier is needed in SMPS
- Learn about Infineon patented coreless transformer technology
- Learn about isolation robustness of Infineon´s galvanically isolated gate driver ICs after EOS in the power stage
Every switch needs a driver, and the right driver makes a difference.
Infineon offers different isoalted gate driver families, such as the EiceDRIVER™ Compact and the EiceDRIVER™ Enhanced. Each family has different features to protect the switch and application.
The EiceDRIVER™ isolated gate driver offers advanced features such as reinforced isolation, Miller clamp, slew rate control and short circuit protection to protect the switch and application. It also enables condition monitoring and rapid prototyping.
The EiceDRIVER™ is the perfect fit for industrial application, particular in combination with Infineon CoolSiC™ and IGBT switches.
- EiceDRIVER™ 1ED Compact now including X3 Compact family (1ED31xx), with up to 14 A output current, 200 kV/µs CMTI
- Show system benefit of Miller clamp, separate output, active shutdown, short circuit clamping, 7-ns prop. delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, SMPS
The EiceDRIVER™ 2L-SRC Compact family (1ED32xx), with two-level slew-rate control and Miller Clamp
2L-SRC optimizes the gate resistors for EMI measurements and for normal operation, compared with the conventional solution
Up to 18 A output current, 200 kV/µs CMTI, VDE 0884-11 & UL 1577, ideal for CoolSiC™ SiC MOSFET and IGBT7 in drive, solar, UPS, etc.
- The EiceDRIVER™ Enhanced X3 Analog family (1ED34xx), with DESAT (adjustable filter time), Miller Clamp, soft-off (adjustable current)
- Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
- The EiceDRIVER™ X3 Compact family (1ED31xx), with up to 14 A output current, 2300 V functional isolation, 200 kV/µs CMTI
- Show system benefit of Miller clamp, separate output, active shutdown, short circuit clamping, 7-ns prop. delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, SMPS
- The new EiceDRIVER™ X3 Digital family (1ED38xx), with I2C-configurability for DESAT, Soft-Off, UVLO, Miller clamp, two level turn off (TLTO).
- Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
Learn how Infineon’s EiceDRIVER™ galvanically-isolated gate driver ICs enable best-in-class efficiency while reducing the total system cost.
- EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
- The CT based isolated gate driver offers higher current, lower power consumption, better CMTI and best in class propagation delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
The EiceDRIVER™ Enhanced F3 family (1ED332x), with DESAT, Miller Clamp, soft-off up to 8.5 A output current, 300 kV/µs CMTI, 15 ns Max. propagation delay matching and 40 V Max output supply voltage.
Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
In this EiceDRIVER™ X3 digital isolated gate driver training you will learn how to install the software that aids you in the evaluation of X3 digital and its evaluation board.
