Active and preferred
RoHS Compliant

IKB10N60T

600 V, 10 A IGBT Discrete with anti-parallel diode in TO-263 package
Data Sheet
package

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IKB10N60T
IKB10N60T
Data Sheet

Product details

  • Eoff (Hard Switching)
    0.27 mJ
  • Eon
    0.16 mJ
  • IC (@ 100°) max
    18 A
  • IC (@ 25° ) max
    24 A
  • ICpuls max
    30 A
  • IF max
    20 A
  • IFpuls max
    30 A
  • Irrm
    10 A
  • Package
    D2PAK (TO-263-3)
  • Ptot max
    110 W
  • QGate
    62 nC
  • Qrr
    380 nC
  • RGint
    0 Ω
  • RG
    23 Ω
  • Soft Switching
    No
  • Switching Frequency
    2 kHz to 20 kHz
  • td(off)
    215 ns
  • td(on)
    12 ns
  • Technology
    IGBT TRENCHSTOP™
  • tf
    38 ns
  • tr
    8 ns
  • tSC
    5 µs
  • VCE(sat)
    1.5 V
  • VCE max
    600 V
  • VF
    1.6 V
Recommended
OPN
IKB10N60TATMA1
Product Status active and preferred
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Hard-switching 600 V, 10 A TRENCHSTOP™ IGBT3 copacked with soft,fast recovery anti-parallel Emitter Controlled diode in a TO-263-3 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept.

Features

  • Lowest VCEsatdrop
  • Low switching losses
  • Positive temp. coeffi. in VCEsat
  • Easy parallel switching capability
  • Very softrolled Diode
  • High ruggedness
  • Temperature stable behavior
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution

Benefits

  • Highest efficiency
  • Comprehensive portfolio
  • High device reliability
  • low conduction and switching losses

Documents

Documents

Design resources

Partner solutions

Developer community

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