Active and preferred

IRHLF77110

Data Sheet
package

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IRHLF77110
IRHLF77110
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • ESD Class
    Class 1B
  • Generation
    R7
  • ID (@100°C) max
    3.7 A
  • ID (@25°C) max
    6 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    TO-205AF
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    13.5 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    320 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    100 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
Recommended
OPN
Product Status active and preferred
Infineon Package
M-TO205-3
Package Name TO-205AF (TO-39)
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
M-TO205-3
Package Name TO-205AF (TO-39)
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
IRHLF77110 is a 60V, 6A rad hard N-channel MOSFET in TO-205AF package. It features electrical performance up to 100krad(Si) TID and offers single event gate rupture and burnout immunity. With COTS classification and threshold voltage within operating limits at all times, this R7 device is ideal for interfacing with logic gates, microcontrollers, and other devices that operate on a 3.3-5V source. It can also be used to increase output current.

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