While GaN system design shares many similarities with other transistor implementations, there are some key differences that must be considered, particularly when operating at high switching frequencies. In these cases, it is essential to follow best-practice layout techniques and take into account other critical considerations to ensure optimal performance and reliability.

Here you will find exclusive technical content to help accelerate your design and its time-to-market.

Learn about the common mistakes to avoid when designing with GaN power transistors, including inadequate drive, insufficient current support, and poor gate drive circuit design.

Learn the fundamentals of designing with GaN (Gallium Nitride) devices, including understanding device limits, gate drive circuits, layout considerations, commutation loops, and thermal management.

Learn about the benefits of using Gallium Nitride (GaN) technology in power supplies, including improved efficiency, reduced size, and increased performance.

Learn how to accurately measure GaN gate signals, including techniques for measuring low-side and high-side gate signals, and how to select the right probes for the job.