Power block

Half-bridge MOSFET solutions in compact packages

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Overview

OptiMOS™ 5 power block from Infineon is a leadless SMD 5.0 mm x 6.0 mm small outline package, integrating a low-side and a high-side MOSFET. This compact, space-saving design targets applications requiring a high power density, such as synchronous rectification buck converter applications.

Key Features

  • High-power capability
  • Optimum thermal performance
  • Compact and simplified layout
  • Layout with lowest loop inductance
  • High-power-density

Products

About

Benefits of the power block package

By replacing two separate discrete packages, such as SO8 or SuperSO8, with the space-saving MOSFET package, OptiMOS™ 5 power block 5x6 customers can shrink their designs by at least 50%. Standardizing the power packages benefits customers, as the number of different package outlines available on the marketplace is minimized.

Benchmark efficiency and high current handling

The MOSFET half-bridge family features Infineon’s proven OptiMOS™ 5 technology, which offers low on-state resistance (RDS(on)) and figures of merit (Qg, Qgd). The source-down connection of the low-side MOSFET results in a large PGND pad which significantly improves the thermal junction to the board, simplifying the layout and reducing EMI.

This solution allows engineers to optimize their designs by increasing the switching frequencies and power density as well as reducing overall BOM costs.

Features of the power block

The power block package family of MOSFETs features:

  •  50 A maximum average load current capability
  •  Source-down low side MOSFET for better cooling
  •  Internally connected low-side and high-side MOSFETs for lowest loop inductance
  •  High side Kelvin connection for more efficient driving

Benefits of the power block package

By replacing two separate discrete packages, such as SO8 or SuperSO8, with the space-saving MOSFET package, OptiMOS™ 5 power block 5x6 customers can shrink their designs by at least 50%. Standardizing the power packages benefits customers, as the number of different package outlines available on the marketplace is minimized.

Benchmark efficiency and high current handling

The MOSFET half-bridge family features Infineon’s proven OptiMOS™ 5 technology, which offers low on-state resistance (RDS(on)) and figures of merit (Qg, Qgd). The source-down connection of the low-side MOSFET results in a large PGND pad which significantly improves the thermal junction to the board, simplifying the layout and reducing EMI.

This solution allows engineers to optimize their designs by increasing the switching frequencies and power density as well as reducing overall BOM costs.

Features of the power block

The power block package family of MOSFETs features:

  •  50 A maximum average load current capability
  •  Source-down low side MOSFET for better cooling
  •  Internally connected low-side and high-side MOSFETs for lowest loop inductance
  •  High side Kelvin connection for more efficient driving

Documents

Documents

Design resources

Developer community

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