Overview

Designed for medium-voltage power MOSFETs in half-bridge applications such as telecom and datacom DC-DC converters, Infineon introduces the EiceDRIVER™ 2EDL8x2x family of dual-channel junction-isolated gate driver ICs. Designers can choose between two different pull-up currents: - 3 A version: It can be the right choice for retrofit designs. - 4 A version: Industry-leading version recommended to reduce MOSFET switching losses.

Key features
  • 120 V bootstrap diode integrated
  • Low resistance rail-to-rail outputs
  • Low-side 3 A pull-up/6 A pull-down
  • High-side 3 A pull-up -2EDL812X
  • High-side 5 A pull-down -2EDL812X
  • High-side 3 A/4 A pull-up -2EDL803X
  • High-side 6 A pull-down -2EDL803X
  • 2 ns delay matching
  • Differential inputs -2EDL812X
  • Independent inputs -2EDL803X
  • Low dead-time losses
  • Leadless packages and pin-out
Applications
DC-DC power conversion for telecom infrastructure
Audio amplifier solutions

Products

About

2EDL8XXX

The 2EDL8XXX family is available with two different input configurations:
 - The 2EDL803X permits the operation of both channels independently. For this reason, it is the perfect choice for diagonally driven full-bridges on the primary side as well as for the synchronous rectification stage on the secondary side because it permits the reduction of losses during the free-wheeling phase.
 - The differential input structure of the 2EDL812X effectively renders it to be a half-bridge gate driver with built-in shoot-through protection, making it a good choice for the primary-side half-bridge stages with a non-diagonal driving scheme.
Common to all variants of 2EDL8XXX family is the integrated 120 V bootstrap diode as well as a precise channel-to-channel propagation delay matching, 2 ns typical that ensures volt-second balance, and avoids magnetic core saturation.

The 2EDL8XXX product family comes in different industry-standard leadless packages and pin-out: Either with the most common and widely used VDSON-8 4x4, VDSON-10 4x4, and VSON-10 3x3 that enables smaller footprint from higher power density designs.

Benefits

 - No need for an external bootstrap diode
 - Fast MOSFET switching
 - Strong pull-down current reduces the risk of return-on from switching noise
 - Low dead-time losses
 - Inherent shoot-through protection
 - -8 V/+15 V common mode rejection

Benefits

 - High power density
 - High efficiency
 - Strong MOSFET reliability
 - Robust operation

2EDL8XXX

The 2EDL8XXX family is available with two different input configurations:
 - The 2EDL803X permits the operation of both channels independently. For this reason, it is the perfect choice for diagonally driven full-bridges on the primary side as well as for the synchronous rectification stage on the secondary side because it permits the reduction of losses during the free-wheeling phase.
 - The differential input structure of the 2EDL812X effectively renders it to be a half-bridge gate driver with built-in shoot-through protection, making it a good choice for the primary-side half-bridge stages with a non-diagonal driving scheme.
Common to all variants of 2EDL8XXX family is the integrated 120 V bootstrap diode as well as a precise channel-to-channel propagation delay matching, 2 ns typical that ensures volt-second balance, and avoids magnetic core saturation.

The 2EDL8XXX product family comes in different industry-standard leadless packages and pin-out: Either with the most common and widely used VDSON-8 4x4, VDSON-10 4x4, and VSON-10 3x3 that enables smaller footprint from higher power density designs.

Benefits

 - No need for an external bootstrap diode
 - Fast MOSFET switching
 - Strong pull-down current reduces the risk of return-on from switching noise
 - Low dead-time losses
 - Inherent shoot-through protection
 - -8 V/+15 V common mode rejection

Benefits

 - High power density
 - High efficiency
 - Strong MOSFET reliability
 - Robust operation

Documents

Documents