Overview

1EDN71x6Gx is a single-channel gate driver IC product family optimized for driving GaN Schottky gate (SG) HEMTs and Si MOSFETs. This gate driver includes several key features that enable a high-performance system design with fast-switching transistors, including TDI, four driving strength options, active Miller clamp, bootstrap voltage clamp, and with or without adjustable charge pump in PG-SON-10 and PG-TSNP-7 package respectively.

Key features
  • Truly differential logic input (TDI)
  • Four driving strengths
  • Active Miller clamp
  • Adjustable negative charge pump
  • Active bootstrap capacitor
Applications
Telecommunications infrastructure
DC-DC power conversion for telecom infrastructure
Audio amplifier solutions
Motor Control
Server power supply

Products

About

Key benefits of EiceDRIVER™ 1EDN71x6x
  • High-side driving and low-side ground bounce immunity
  • Optimized switching speed without external gate resistors
  • Avoids induced turn-on with active Miller clamping
  • Optional charge pump provides additional induced turn-on immunity when needed
  • Avoids overcharging the bootstrap capacitor during dead-time
EiceDRIVER™ 1EDN71x6x optimized packages

PG-SON-10 package with adjustable charge pump and PG-TSNP-7 package without a charge pump.

Benefits from the TDI feature

Thanks to the TDI feature, the gate driver output state is exclusively controlled by the voltage difference between the two inputs, independent of the driver’s reference (ground) potential if the common-mode voltage is below 150 V (static) and 200 V (dynamic). This eliminates the risk of false triggering due to ground bounce in low-side applications, while also allowing 1EDN71x6Gx to address even high-side applications.

Key benefits of EiceDRIVER™ 1EDN71x6x
  • High-side driving and low-side ground bounce immunity
  • Optimized switching speed without external gate resistors
  • Avoids induced turn-on with active Miller clamping
  • Optional charge pump provides additional induced turn-on immunity when needed
  • Avoids overcharging the bootstrap capacitor during dead-time

EiceDRIVER™ 1EDN71x6x optimized packages

PG-SON-10 package with adjustable charge pump and PG-TSNP-7 package without a charge pump.

Benefits from the TDI feature

Thanks to the TDI feature, the gate driver output state is exclusively controlled by the voltage difference between the two inputs, independent of the driver’s reference (ground) potential if the common-mode voltage is below 150 V (static) and 200 V (dynamic). This eliminates the risk of false triggering due to ground bounce in low-side applications, while also allowing 1EDN71x6Gx to address even high-side applications.

Documents

Documents

News & highlights

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This brief introduction to paralleling CoolGaN™ devices for scalability, shows various boards available for different power classes all of which retain the efficiency and compact form factor sought after by design engineers.

Gate driver design and layout for GaN SG HEMTs

Watch this webinar and discover how GaN HEMT gate driving can be simple and effective with the right gate driver IC and PCM layout techniques