Electrical or light triggered thyristors with blocking capability up to 8.5 kV. IGBT press packs and freewheeling diodes up to 4.5 kV.

  • Full blocking capability 50/60 Hz
  • High DC blocking stability
  • High surge current capability
  • High turn-on di/dt capability
  • High dv/dt capability
  • Minimized maintenance and reduced downtime
  • Easy system power scaling
  • Fuseless design possible

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About

The demand for energy increases year after year. The driving factors are, of course, the rising population around the globe and on the other hand the steadily increasing living standard which leads to more and more energy consumption per person.

Naturally, this conducts to an increase in energy production. In many countries, the sources for energy production are far away from the centers of energy consumption. This is especially true for green energy production such as hydro, wind, and solar power plants.

In other projects, the distance may be shorter, but the installation of the power connection is complex; for example, if a sub-sea cable connection is required. In these cases, High Voltage Direct Current (HVDC) transmission is the best solution to connect the source and consumer site. 

Energy transmission by HVDC (LCC, VSC) based on power semiconductors becomes more important. The optimal combination of power semiconductors is a key component. HVDC-LCC applications need light- or electrical triggered thyristors with blocking capability up to 8.5 kV. HVDC-VSC uses IGBT press packs and diodes up to 4.5 kV. Discover our deep product portfolio for (HVDC) transmission.

Infineon offer a high-power product portfolio with new direct press pack IGBTs using Infineon's trench 4.5 kV IGBT chips: Prime Switch. The innovative design of internal chip-stack and housing enables Infineon to create a perfect fitting portfolio with different current values and topologies. PPI devices with or without internal freewheeling fiodes (FWD) form a complete new high power IGBT portfolio.

In the near future, High Voltage Direct Current (HVDC) transmission systems up to 12 GW are planned. For this kind of edge technology high-power thyristors are the key components. To decrease the amount of electronics on high potential direct light triggered thyristors (LTTs) are used. These LTTs have the advantage of easy isolated triggering by fiber optic links. Our Prime Disc family is available with integrated Break over Diode (BoD), dv/dt-, and Forward Recovery Protection (FRP), which helps to simplify the layout of modern HVDC converters.

Electrical triggered thyristors (ETT) are designed for extreme high performance and low losses. By using the low temperature sintering technology (LTS) the surge current and blocking behavior reaches high limit including high reliability.

The demand for energy increases year after year. The driving factors are, of course, the rising population around the globe and on the other hand the steadily increasing living standard which leads to more and more energy consumption per person.

Naturally, this conducts to an increase in energy production. In many countries, the sources for energy production are far away from the centers of energy consumption. This is especially true for green energy production such as hydro, wind, and solar power plants.

In other projects, the distance may be shorter, but the installation of the power connection is complex; for example, if a sub-sea cable connection is required. In these cases, High Voltage Direct Current (HVDC) transmission is the best solution to connect the source and consumer site. 

Energy transmission by HVDC (LCC, VSC) based on power semiconductors becomes more important. The optimal combination of power semiconductors is a key component. HVDC-LCC applications need light- or electrical triggered thyristors with blocking capability up to 8.5 kV. HVDC-VSC uses IGBT press packs and diodes up to 4.5 kV. Discover our deep product portfolio for (HVDC) transmission.

Infineon offer a high-power product portfolio with new direct press pack IGBTs using Infineon's trench 4.5 kV IGBT chips: Prime Switch. The innovative design of internal chip-stack and housing enables Infineon to create a perfect fitting portfolio with different current values and topologies. PPI devices with or without internal freewheeling fiodes (FWD) form a complete new high power IGBT portfolio.

In the near future, High Voltage Direct Current (HVDC) transmission systems up to 12 GW are planned. For this kind of edge technology high-power thyristors are the key components. To decrease the amount of electronics on high potential direct light triggered thyristors (LTTs) are used. These LTTs have the advantage of easy isolated triggering by fiber optic links. Our Prime Disc family is available with integrated Break over Diode (BoD), dv/dt-, and Forward Recovery Protection (FRP), which helps to simplify the layout of modern HVDC converters.

Electrical triggered thyristors (ETT) are designed for extreme high performance and low losses. By using the low temperature sintering technology (LTS) the surge current and blocking behavior reaches high limit including high reliability.

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