Active and preferred
RoHS Compliant
Lead-free

S70GL02GT11FHI010

Data Sheet
package
software
ea.
in stock

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S70GL02GT11FHI010
S70GL02GT11FHI010
ea.
Data Sheet

Product details

  • Density
    2 GBit
  • Family
    GL-T
  • Initial Access Time
    110 ns
  • Interface Frequency (SDR/DDR) (MHz)
    NA
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature
    -40 °C to 85 °C
  • Operating Voltage
    3 V
  • Page Access Time
    20 ns
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2035
  • Qualification
    Industrial
Recommended
OPN
S70GL02GT11FHI010
Product Status active and preferred
Infineon Package
PG-LFBGA-64
Package Name FBGA-64 (002-13243)
Packing Size 1800
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-LFBGA-64
Package Name FBGA-64 (002-13243)
Packing Size 1800
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The S70GL02GT11FHI010 is a 2 Gb (256 MB) parallel NOR flash memory based on 45-nm MIRRORBIT™ technology with a dual-die stack. It delivers 20 ns page and 110 ns random access times, supports a 512-byte programming buffer, and operates from a 3.0 V supply (2.7 V to 3.6 V) with I/O voltages from 1.65 V to VCC. With 2048 uniform 128-KB sectors, advanced sector protection, and 100,000 program-erase cycles, it is ideal for high-density embedded applications requiring reliability.

Features

  • 45 nm MIRRORBIT™ process technology
  • Parallel 3.0 V core with versatile I/O
  • ×8 and ×16 data bus support
  • 16-word/32-byte page read buffer
  • 512-byte programming buffer
  • Uniform 128-KB sectors, 2048 sectors
  • Suspend/Resume for program/erase
  • Advanced sector protection (ASP)
  • WP# input for last sector protection
  • 20 ns page access, 110 ns random access
  • 100,000 program-erase cycles per sector
  • 20-year data retention at 1K cycles

Benefits

  • High density for embedded applications
  • Fast programming boosts system speed
  • Flexible I/O for broad compatibility
  • Efficient block management with large sectors
  • Reliable data with advanced protection
  • Easy status monitoring simplifies design
  • Long endurance reduces maintenance
  • Low power modes extend battery life
  • Quick access improves performance
  • Secure last sector for critical code
  • Consistent performance over temperature
  • Long data retention ensures reliability

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }