Active and preferred
RoHS Compliant
Lead-free

S29GL512S11DHI010

Data Sheet
package
software

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

S29GL512S11DHI010
S29GL512S11DHI010
Data Sheet

Product details

  • Density
    512 MBit
  • Family
    GL-S
  • Initial Access Time
    110 ns
  • Interface Frequency (SDR/DDR) (MHz)
    NA
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature
    -40 °C to 85 °C
  • Operating Voltage
    3 V
  • Page Access Time
    15 ns
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2035
  • Qualification
    Industrial
Recommended
OPN
S29GL512S11DHI010
Product Status active and preferred
Infineon Package
PG-LFBGA-64
Package Name FBGA-64 (002-15537)
Packing Size 1300
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-LFBGA-64
Package Name FBGA-64 (002-15537)
Packing Size 1300
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The S29GL512S11DHI010 is a 512 Mb parallel NOR flash memory using 65 nm MIRRORBIT™ Eclipse technology. It operates at 3.0 V core voltage with versatile I/O from 1.65 V to 3.6 V, features a 16-bit data bus, asynchronous page mode reads as fast as 15 ns, and random access times down to 100 ns. The device supports a 512-byte programming buffer, uniform 128 kbyte sector erase, internal ECC, and advanced sector protection. It is designed for embedded code storage.

Features

  • 65 nm MIRRORBIT™ Eclipse technology
  • CMOS 3.0 V core with versatile I/O
  • Single supply for read/program/erase
  • Versatile I/O voltage range: 1.65 V to VCC
  • 16-bit data bus
  • Asynchronous 32-byte page read
  • 512-byte programming buffer
  • Internal hardware ECC with single bit
  • Uniform 128 KB sectors
  • Suspend/resume for program and erase
  • Advanced sector protection (ASP)
  • 1024-byte one time program (OTP) array

Benefits

  • High reliability with 65 nm process
  • Flexible I/O supports system integration
  • Easy power supply design
  • Supports wide I/O voltage range
  • Fast data transfers with 16-bit bus
  • Efficient page read for fast access
  • Fast programming with large buffer
  • ECC enhances data integrity
  • Simple sector management
  • Interruptible program/erase for flexibility
  • Robust data and sector protection
  • Secure OTP for permanent data

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }