IRHYS6S7130CM

Data Sheet

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IRHYS6S7130CM
IRHYS6S7130CM
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • ESD Class
    Class 2
  • Generation
    R6
  • ID (@100°C) max
    19 A
  • ID (@25°C) max
    20 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    TO-257AA Low Ohmic
  • Polarity
    N
  • QG
    50 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    42 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS
    100 V
  • VF max
    1.2 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
The IRHYS6S7130CM R6 N-channel MOSFET is a single rad hard device designed for space applications. With a voltage rating of 100V and a current rating of 20A, it is ideal for switching applications such as DC-DC converters and motor control. This MOSFET is radiation-hardened for up to 100krad(Si) TID classified. It also features low RDS(on), low gate charge, and fast switching.

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{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }