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IRHNA57260SE

Data Sheet
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IRHNA57260SE
IRHNA57260SE
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 3B
  • Generation
    R5
  • ID (@100°C) max
    35 A
  • ID (@25°C) max
    53.5 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100
  • Package
    SMD-2
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    155 nC
  • QPL Part Number
    2N7473U2
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    38 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS
    200 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
Recommended
OPN
Product Status active and preferred
Infineon Package
C-CCN-3
Package Name SMD-2 standard
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
C-CCN-3
Package Name SMD-2 standard
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
The IRHNA57260SE N-channel MOSFET is a radiation-hardened device with a 200V, 35A rating. The R5 device features low RDS(on) and gate charge, which deliver high power efficiency for DC-DC converters and motor control. The COTS device is designed for space applications, with Total Dose and Single Event Effects characterization. The SMD-2 package features lead form down, and electrical performance is up to 100krad(Si) TID.

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