IRFH4255D

25V Dual N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm Lead Free package
Data Sheet

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IRFH4255D
IRFH4255D
Data Sheet

Product details

  • ID max
    64 A, 105 A
  • IDpuls max
    420 A, 120 A
  • Moisture Sensitivity Level
    1
  • Operating Temperature min
    -55 °C
  • Package
    PowerStage 5x6 (TISON-8)
  • Polarity
    N+N
  • Ptot max
    31 W, 38 W
  • Qgd
    8.4 nC, 3.8 nC
  • QG
    23 nC, 10 nC
  • RDS (on) max
    3.2 mΩ, 1.5 mΩ
  • RDS (on) (@4.5V) max
    4.6 mΩ, 2.1 mΩ
  • RthJA max
    34 K/W, 31 K/W
  • Special Features
    Schottky (includes Schottky like and FETky)
  • Tj min
    -55 °C
  • VDS max
    25 V, 25 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Benefits

  • Control and synchronous MOSFETs in one package
  • Low charge control MOSFET (10nC typical)
  • Low RDSON synchronous MOSFET (less than 2.10mOhms)
  • Intrinsic Schottky Diode with Low Forward Voltage on Q2
  • RoHS Compliant
  • Halogen-Free
  • MSL1
  • Industrial Qualification
  • FastIRFET™

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