Active and preferred
RoHS Compliant
Lead-free

IMZC120R017M2H

CoolSiC™ MOSFET discrete 1200 V G2 in TO-247 4pin with high creepage package
Data Sheet
package
board
ea.
in stock

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IMZC120R017M2H
IMZC120R017M2H
ea.
Data Sheet

Product details

  • Ciss
    2910 pF
  • Coss
    126 pF
  • ID (@ TC=25°C) max
    97 A
  • Mounting
    THT
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    TO-247-4 high creepage
  • Pin Count
    4 Pins
  • Polarity
    N
  • Ptot (@ TA=25°C) max
    382 W
  • Qgd
    24 nC
  • QG
    89 nC
  • Qualification
    Industrial
  • RDS (on) (@ Tj = 25°C)
    17 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    0.39 K/W
  • Technology
    CoolSiC™ G2
  • Tj max
    200 °C
  • VDS max
    1200 V
Recommended
OPN
IMZC120R017M2HXKSA1
Product Status active and preferred
Infineon Package
PG-TO247-4
Package Name TO-247-4 HC 8.8mm
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TO247-4
Package Name TO-247-4 HC 8.8mm
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The 1200 V, 17 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Features

  • RDS(on) = 17 mΩ at VGS = 18 V, Tvj = 25°C
  • Very low switching losses
  • Wider max. VGS range from -10 V to +25 V
  • Overload operation up to Tvj = 200°C
  • Short circuit withstand time 2 µs
  • Benchmark gate threshold voltage 4.2 V
  • Robust against parasitic turn on
  • .XT interconnection technology
  • Tighter VGS(th) parameter distribution

Benefits

  • Better energy efficiency
  • Cooling optimization
  • Higher power density
  • New robustness features
  • Highly reliable
  • Easy paralleling

Documents

Documents

Design resources

Partner solutions

Developer community

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