Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
END OF LIFE
discontinued
RoHS Compliant
Lead-free

IKP06N60T

END OF LIFE
600 V, 6 A IGBT discrete with anti-parallel diode in TO220 package
Data Sheet
package

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IKP06N60T
IKP06N60T
Data Sheet

Product details

  • Eoff (Hard Switching)
    0.11 mJ
  • Eon
    0.09 mJ
  • IC (@ 100°) max
    6 A
  • IC (@ 25° ) max
    12 A
  • ICpuls max
    18 A
  • IF max
    12 A
  • IFpuls max
    18 A
  • Irrm
    5.3 A
  • Package
    TO-220-3
  • Ptot max
    88 W
  • QGate
    42 nC
  • Qrr
    190 nC
  • RGint
    0 Ω
  • RG
    23 Ω
  • Soft Switching
    No
  • Switching Frequency
    2 kHz to 20 kHz
  • td(off)
    130 ns
  • td(on)
    9 ns
  • Technology
    IGBT TRENCHSTOP™
  • tf
    58 ns
  • tr
    6 ns
  • tSC
    5 µs
  • VCE(sat)
    1.5 V
  • VCE max
    600 V
  • VF
    1.6 V
OPN
IKP06N60TXKSA1
Product Status discontinued
Infineon Package
PG-TO220-3
Package Name TO220
Packing Size 500
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status discontinued
Infineon Package
PG-TO220-3
Package Name TO220
Packing Size 500
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Hard-switching 600 V, 6 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Features

  • Lowest VCEsatdrop
  • Low switching losses
  • Positive temp. coeffi. in VCEsat
  • Easy parallel switching capability
  • Very soft anti-parallel Diode
  • High ruggedness
  • Temperature stable behavior
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution

Benefits

  • Highest efficiency
  • Comprehensive portfolio
  • High device reliability
  • low conduction and switching losses

Documents

Documents

Design resources

Partner solutions

Developer community

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